SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR
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Abstract
An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of a trench; a silicon oxide film formed on the inner wall of trench; an oxidation preventive film formed between silicon oxide film and semiconductor substrate; and a filling oxide film filling trench. Gate oxide film is formed by oxidation having a high capability by which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated. Thereby, gate oxide film is formed so as to have a almost uniform thickness such that a thickness of a region directly above oxidation preventive film and a thickness of a region directly below gate electrode are almost the same is each other. According to the above procedure, there are obtained a semiconductor device having good transistor characteristics and a fabrication process therefor.
17 Citations
11 Claims
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1-8. -8. (canceled)
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9. A semiconductor device comprising:
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a semiconductor substrate having a trench at a main surface thereof; an oxidation preventive film including a nitrogen formed along an inner wall; a filling layer filling said trench with said preventive film located between said filling layer and said semiconductor substrate; a gate oxide film formed on said main surface of said semiconductor substrate and said oxidation preventive film; and a gate electrode formed on said gate oxide film, wherein said gate oxide film has substantially the same thickness in a region directly above said oxidation preventive film and a region directly below said gate electrode between source and drain regions, and said gate oxide film directly above said oxidation preventive film includes said nitrogen. - View Dependent Claims (10, 11)
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Specification