NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. A method for manufacturing a nonvolatile semiconductor memory device, comprising:
- forming a charge storage film, a tunnel insulating film, and a channel film made of a silicon crystal in this order on a gate electrode; and
forming a silicon oxide layer at an interface between the tunnel insulating film and the channel film by performing thermal treatment in an oxygen gas atmosphere.
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Abstract
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface of the trench, and a channel silicon crystalline film is formed on the silicon oxide film. Next, a silicon oxide layer is formed at an interface between the silicon oxide film and the channel silicon crystalline film by performing thermal treatment in an oxygen gas atmosphere.
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Citations
20 Claims
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1. A method for manufacturing a nonvolatile semiconductor memory device, comprising:
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forming a charge storage film, a tunnel insulating film, and a channel film made of a silicon crystal in this order on a gate electrode; and forming a silicon oxide layer at an interface between the tunnel insulating film and the channel film by performing thermal treatment in an oxygen gas atmosphere. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a nonvolatile semiconductor memory device, comprising:
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forming a charge storage film, a tunnel insulating film, and a channel film made of a silicon crystal in this order on a gate electrode; and forming a silicon oxynitride layer at an interface between the tunnel insulating film and the channel film by performing thermal treatment in a nitrogen monoxide gas atmosphere. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A nonvolatile semiconductor memory device comprising:
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a substrate; a stacked body provided on the substrate, the stacked body including a plurality of interlayer insulating films and gate electrodes alternately stacked therein, and the stacked body including a trench; a charge storage film provided on an inner surface of the trench; a tunnel insulating film provided on the charge storage film; and a channel film provided on the tunnel insulating film and made of a silicon crystal, one of a silicon oxide layer and a silicon oxynitride layer being formed at an interface between the tunnel insulating film and the channel film. - View Dependent Claims (20)
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Specification