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NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20100140684A1
  • Filed: 10/08/2009
  • Published: 06/10/2010
  • Est. Priority Date: 12/10/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a nonvolatile semiconductor memory device, comprising:

  • forming a charge storage film, a tunnel insulating film, and a channel film made of a silicon crystal in this order on a gate electrode; and

    forming a silicon oxide layer at an interface between the tunnel insulating film and the channel film by performing thermal treatment in an oxygen gas atmosphere.

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