Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics
8 Assignments
0 Petitions
Accused Products
Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
159 Citations
75 Claims
-
1-59. -59. (canceled)
-
60. A semiconductor device comprising:
-
a plurality of primary trenches extending into the semiconductor region, each of the plurality of trenches having a first end, a second end, and opposing sidewalls lined with a dielectric layer, each trench further having a shield electrode; an end trench extending into the semiconductor region and disposed adjacent to and spaced from the first ends of the primary trenches, the end trench having opposing sidewalls lined with a dielectric layer and an electrode disposed in the end trench; and a gap region disposed between the end trench and the first ends of the primary trenches, the gap region being at a floating potential. - View Dependent Claims (61, 62, 63, 64, 65, 66, 67, 68, 69, 70)
-
-
71. A semiconductor device comprising:
-
a plurality of primary trenches extending into the semiconductor region and arranged in a array of a plurality of inner primary trenches disposed between a first outer primary trench and a second outer primary trench, each primary trenches having a first end, a second end, and opposing sidewalls lined with a dielectric layer, each trench further having a shield electrode; an perimeter trench extending into the semiconductor region, the perimeter trench having opposing sidewalls lined with a dielectric layer and an electrode disposed in the perimeter trench, the perimeter trench having a first leg disposed adjacent to and spaced from the first ends of the primary trenches, a second leg disposed adjacent to and spaced from the first outer primary trench, and a corner disposed between the first and second legs; and a gap region disposed between the perimeter trench and the first ends of the primary trenches; and wherein the first end of the first outer primary trench is spaced further from the perimeter trench than the first ends of at least one inner primary trench. - View Dependent Claims (72, 73, 74)
-
-
75-76. -76. (canceled)
Specification