Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics
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Accused Products
Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
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Citations
102 Claims
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1-70. -70. (canceled)
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71. A semiconductor device comprising:
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a first plurality of parallel trenches extending in a semiconductor region, each trench having a shield electrode and a gate electrode vertically stacked therein, the shield and gate electrodes being electrically insulated from each other; a first pad adapted to receive a first external connection and electrically coupled to the shield electrodes of the first plurality of parallel trenches; a second pad adapted to receive a second external connection; an electrical trace electrically coupled to the second pad and to the gate electrode of at least one trench of the first plurality of parallel trenches; and a second plurality of parallel trenches extending in a semiconductor region and disposed under at least one of the second pad and the electrical trace, each trench of the second plurality having a first electrode disposed therein. - View Dependent Claims (72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102)
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Specification