×

Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics

  • US 20100140697A1
  • Filed: 04/08/2009
  • Published: 06/10/2010
  • Est. Priority Date: 12/08/2008
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first trench extending into a semiconductor region;

    a first dielectric layer lining opposing sidewalls of the first trench, the first dielectric layer being thicker along one of the opposing sidewalls than along the other;

    a gate electrode disposed in the first trench; and

    a plurality of trenches extending into the semiconductor region, each of the plurality of trenches having opposing sidewalls lined with a dielectric layer and a gate electrode disposed between the sidewalls, the dielectric layer of each trench having the same thickness along the portions of both the opposing sidewalls that face the gate electrode.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×