×

Semiconductor Device and Method of Forming an IPD Beneath a Semiconductor Die with Direct Connection to External Devices

  • US 20100140780A1
  • Filed: 12/10/2008
  • Published: 06/10/2010
  • Est. Priority Date: 12/10/2008
  • Status: Active Grant
First Claim
Patent Images

1. A method of manufacturing a semiconductor device, comprising:

  • providing a substrate;

    forming a conductive layer on the substrate, the conductive layer having a first portion constituting contact pads and a second portion constituting an inductor;

    providing a semiconductor die with an insulating spacer;

    leading with the insulating spacer, mounting the semiconductor die to the substrate over the second portion of the conductive layer;

    forming an electrical connection between contact pads on the semiconductor die and the contact pads on the substrate;

    forming an encapsulant around the semiconductor die, electrical connections, insulating spacer, and conductive layer; and

    removing the substrate to expose the conductive layer.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×