Semiconductor Device and Method of Forming an IPD Beneath a Semiconductor Die with Direct Connection to External Devices
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
forming a conductive layer on the substrate, the conductive layer having a first portion constituting contact pads and a second portion constituting an inductor;
providing a semiconductor die with an insulating spacer;
leading with the insulating spacer, mounting the semiconductor die to the substrate over the second portion of the conductive layer;
forming an electrical connection between contact pads on the semiconductor die and the contact pads on the substrate;
forming an encapsulant around the semiconductor die, electrical connections, insulating spacer, and conductive layer; and
removing the substrate to expose the conductive layer.
5 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has a conductive layer formed on a substrate. The conductive layer has a first portion constituting contact pads and a second portion constituting an integrated passive device such as an inductor. A spacer is formed on the substrate around the second portion of the conductive layer. The spacer can be insulating material or conductive material for shielding. A semiconductor die is mounted to the spacer. An electrical connection is formed between contact pads on the semiconductor die and the contact pads on the substrate. An encapsulant is formed around the semiconductor die, electrical connections, spacer, and conductive layer. The substrate is removed to expose the conductive layer. An interconnect structure is formed on the backside of the substrate. The interconnect structure is electrically connected to the conductive layer. The semiconductor device can be integrated into a package.
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Citations
24 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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providing a substrate; forming a conductive layer on the substrate, the conductive layer having a first portion constituting contact pads and a second portion constituting an inductor; providing a semiconductor die with an insulating spacer; leading with the insulating spacer, mounting the semiconductor die to the substrate over the second portion of the conductive layer; forming an electrical connection between contact pads on the semiconductor die and the contact pads on the substrate; forming an encapsulant around the semiconductor die, electrical connections, insulating spacer, and conductive layer; and removing the substrate to expose the conductive layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a semiconductor device, comprising:
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providing a substrate; forming a conductive layer on the substrate, the conductive layer having a first portion constituting contact pads and a second portion constituting an integrated passive device; forming a spacer on the substrate around the second portion of the conductive layer; mounting a semiconductor die to the spacer; forming an electrical connection between contact pads on the semiconductor die and the contact pads on the substrate; forming an encapsulant around the semiconductor die, electrical connections, and conductive layer; and removing the substrate to expose the conductive layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor device, comprising:
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providing a substrate; forming a conductive layer on the substrate, the conductive layer including an integrated passive device; forming a spacer on the substrate around the conductive layer; mounting a semiconductor die to the spacer; forming an encapsulant around the semiconductor die and conductive layer; and removing the substrate to expose the conductive layer. - View Dependent Claims (16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a spacer; a semiconductor die mounted over the spacer; a conductive layer formed below the spacer, the conductive layer including an integrated passive device which is exposed from the semiconductor device; and an encapsulant formed around the semiconductor die and conductive layer. - View Dependent Claims (21, 22, 23, 24)
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Specification