CHIP HAVING THERMAL VIAS AND SPREADERS OF CVD DIAMOND

• US 20100140790A1
• Filed: 07/09/2009
• Published: 06/10/2010
• Est. Priority Date: 12/05/2008
• Status: Abandoned Application

• Current Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Original Assignee: Seagate Technology LLC (Seagate Technology Holdings Plc)
• Inventors: Liu, Hongyue, Setiadi, Dadi
• Application Number:
  US12/500,268
• Publication Number:
  US 20100140790A1
• Time in Patent Office: Days
• US Class Current: 257/698
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/3732 Diamonds
• CPC Class Codes: H01L 23/49551 characterised by bent parts
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H05K 1/0206 : by printed thermal vias
• CPC Class Codes: H05K 2201/10689 : Leaded Integrated Circuit [IC] package, e.g. dual-in-line [DIL]
• CPC Class Codes: H05K 3/42 : Plated through-holes or plated via connections

Abstract

An integrated circuit chip having a heat spreader comprising CVD diamond extending along the chip support body and thermal vias extending through the support body in regions free of active devices or functional elements. The thermal vias may thermally conductive and electrically conductive or may be thermally conductive and electrically resistive. The integrated circuit chips may be 3D integrated circuit chips.

Claims

1. An integrated circuit chip comprising:

a support body having thereon at least one active device;

a heat spreader comprising CVD diamond extending along the support body; and

at least one thermal via extending through the support body.

2. The integrated circuit chip of claim 1 wherein the at least one thermal via comprises CVD diamond.

3. The integrated circuit chip of claim 1 wherein the at least one thermal via comprises copper and/or tungsten.

4. The integrated circuit chip of claim 1 comprising a plurality of thermal vias extending through the support body.

5. The integrated circuit chip of claim 4 wherein the plurality of thermal vias comprise CVD diamond.

6. The integrated circuit chip of claim 1 wherein the heat spreader is 100 nm-10 μ

m thick.

7. The integrated circuit chip of claim 1 wherein the chip is a three-dimensional (3D) chip comprising:

a first tier comprising a first support body having thereon at least one active device, a first heat spreader comprising CVD diamond extending along the first support body, and at least one first thermal via extending through the first support body; and

a second tier comprising a second support body having thereon at least one active device, a second heat spreader comprising CVD diamond extending along the second support body, and at least one second thermal via extending through the second support body, the first heat spreader positioned between the first support body and the second support body.

8. The 3D integrated circuit chip of claim 7 wherein the at least one first thermal via comprises CVD diamond and the at least one second thermal via comprises CVD diamond.

9. The 3D integrated circuit chip of claim 7 comprising a plurality of first thermal vias extending through the first support body and a plurality of second thermal vias extending through the second support body.

10. The 3D integrated circuit chip of claim 9 wherein the plurality of first thermal vias comprise CVD diamond and the plurality of second thermal vias comprise CVD diamond.

11. The integrated circuit chip of claim 1 wherein the at least one active device is a CMOS transistor or a bipolar transistor.

12. An integrated circuit chip comprising:

a support body having side edges and a thickness;

a plurality of functional elements arranged on the support body to form regions free of functional elements;

at least one thermal via extending through the thickness of the support body in the regions free of functional elements; and

a heat spreader comprising CVD diamond extending to the side edges along the support body.

13. The integrated circuit chip of claim 12 wherein the thermal vias are thermally conductive and electrically conductive.

14. The integrated circuit chip of claim 13 wherein the thermal vias comprise copper and/or tungsten.

15. The integrated circuit chip of claim 12 wherein the thermal vias are thermally conductive and electrically resistive.

16. The integrated circuit chip of claim 15 wherein the thermal vias comprise CVD diamond.

17. The integrated circuit chip of claim 12 wherein a first thermal via is thermally conductive and electrically conductive and a second thermal via is thermally conductive and electrically resistive.

18. The integrated circuit chip of claim 17 wherein the first thermal via comprises copper and/or tungsten and the second thermal via comprises CVD diamond.

19. The integrated circuit chip of claim 12 wherein the chip is a three-dimensional (3D) chip comprising:

a first tier comprising a first support body having a plurality of regions free of active devices, at least one thermal via extending through the thickness of the first support body in the regions, and a first heat spreader comprising CVD diamond extending to the side edges along the first support body; and

a second tier comprising a second support body having a plurality of regions free of active devices, with the regions of the second tier vertically aligned with the regions of the first tier, at least one thermal via extending through the thickness of the second support body in the regions, and a second heat spreader comprising CVD diamond extending to the side edges along the second support body, the first heat spreader positioned between the first support body and the second support body.

20. The 3D integrated circuit chip of claim 19 wherein the thermal vias comprise CVD diamond.