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Bump Structure for Stacked Dies

  • US 20100140805A1
  • Filed: 12/10/2008
  • Published: 06/10/2010
  • Est. Priority Date: 12/10/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first semiconductor substrate;

    through-silicon vias extending through the first semiconductor substrate, the through-silicon vias protruding from a backside of the first semiconductor substrate;

    a first isolation film on the backside of the first semiconductor substrate between adjacent ones of the through-silicon vias, the first isolation film not extending beyond the protruding through-silicon vias;

    a conductive element having a tapered sidewall and being electrically coupled to at least one of the through-silicon vias; and

    a second isolation film on the first isolation film and at least a portion of the conductive element.

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