Bump Structure for Stacked Dies
First Claim
1. A semiconductor device comprising:
- a first semiconductor substrate;
through-silicon vias extending through the first semiconductor substrate, the through-silicon vias protruding from a backside of the first semiconductor substrate;
a first isolation film on the backside of the first semiconductor substrate between adjacent ones of the through-silicon vias, the first isolation film not extending beyond the protruding through-silicon vias;
a conductive element having a tapered sidewall and being electrically coupled to at least one of the through-silicon vias; and
a second isolation film on the first isolation film and at least a portion of the conductive element.
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Accused Products
Abstract
A bump structure that may be used for stacked die configurations is provided. Through-silicon vias are formed in a semiconductor substrate. A backside of the semiconductor substrate is thinned to expose the through-silicon vias. An isolation film is formed over the backside of the semiconductor substrate and the exposed portion of the through-silicon vias. The isolation film is thinned to re-expose the through-silicon vias. Bump pads and redistribution lines are formed on the backside of the semiconductor substrate providing an electrical connection to the through-silicon vias. Another isolation film is deposited and patterned, and a barrier layer is formed to provide contact pads for connecting to an external device, e.g., another die/wafer or circuit board.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first semiconductor substrate; through-silicon vias extending through the first semiconductor substrate, the through-silicon vias protruding from a backside of the first semiconductor substrate; a first isolation film on the backside of the first semiconductor substrate between adjacent ones of the through-silicon vias, the first isolation film not extending beyond the protruding through-silicon vias; a conductive element having a tapered sidewall and being electrically coupled to at least one of the through-silicon vias; and a second isolation film on the first isolation film and at least a portion of the conductive element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a semiconductor device, the method comprising:
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providing a first semiconductor substrate, the first semiconductor substrate having a through-silicon via extending from a first side into the first semiconductor substrate; exposing the through-silicon via on a second side of the first semiconductor substrate; forming a first isolation film along the second side of the first semiconductor substrate such that the through-silicon via is exposed; forming a conductive element with tapered sidewalls on the through-silicon via; forming a second isolation film on the first isolation film, the first isolation film and the second isolation film being formed of different materials; and forming a contact barrier layer over at least a portion of the conductive element. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of forming a semiconductor device, the method comprising:
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providing a first semiconductor substrate having a plurality of through-silicon vias extending from a circuit-side to a backside of the first semiconductor substrate, a conductive pad having tapered sidewalls being located over each of the plurality of through-silicon vias on the backside, the backside of the first semiconductor substrate having a first isolation film and a second isolation film on the first isolation film; providing a second semiconductor substrate having a plurality of top contacts; and bonding the first semiconductor substrate to the second semiconductor substrate such that each of the plurality of top contacts of the second semiconductor substrate are electrically coupled with respective ones of the conductive pads on the first semiconductor substrate. - View Dependent Claims (18, 19, 20)
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Specification