SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA

• US 20100141816A1
• Filed: 02/11/2010
• Published: 06/10/2010
• Est. Priority Date: 02/24/2006
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Ohgishi, Yuko, Ando, Takashi, Yamaguchi, Tetsuji, Maruyama, Yasushi, Hiyama, Susumu
• Granted Patent: US 8,471,314 B2
• Time in Patent Office: Days
• US Class Current: 348/294
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/022475 composed of indium tin oxide [ITO]

Abstract

A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

Claims

1. A solid-state imaging device comprising:

a substrate having a first surface and a second surface, light being incident on the second surface side;

a wiring layer disposed on the first surface side;

a photodetector formed in the substrate and including a first region of a first conductivity type;

a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and

at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

2. The solid-state imaging device according to claim 1, wherein the photodetector includes a second region of a second conductivity type, and the second region is disposed at least on the first surface side or the second surface side.

3. The solid-state imaging device according to claim 1, wherein the at least one control gate includes a plurality of control gates, and the plurality of control gates are disposed with respect to a single photodetector.

4. A method for producing a solid-state imaging device including a substrate having a first surface and a second surface, a wiring layer being disposed on the first surface side, and light being incident on the second surface side, the method comprising the steps of;

forming a photodetector including a first region of a first conductivity type in the substrate;

forming a transfer gate at an area on the first surface of the substrate and adjacent to the photodetector; and

forming a control gate at an area on the first surface of the substrate and superposed on the photodetector.

5. A camera comprising:

a solid-state imaging device including

a substrate having a first surface and a second surface, light being incident on the second surface side; and

a wiring layer disposed on the first surface side;

an optical system that guides incident light to the second surface side; and

a signal-processing circuit that processes an output signal of the solid-state imaging device;

wherein the solid-state imaging device further includes

a photodetector disposed in the substrate and including a first region of a first conductivity type,

a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and

a control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.

6. A solid-state imaging device comprising:

a transparent conducive film disposed above a light-receiving surface of a photodetector; and

an insulating film disposed between the light-receiving surface and the transparent conductive film, the insulating film having a thickness of 50 nm or less.

7. The solid-state imaging device according to claim 6, wherein the insulating film is a silicon oxide film or a silicon oxynitride film.

9. The solid-state imaging device according to claim 7, further comprising:

a substrate having a first surface and a second surface; and

a wiring layer disposed on the first surface side of the substrate;

wherein the second surface side of the substrate functions as the light-receiving surface of the photodetector, and the solid-state imaging device is of a backside-illumination type.

8. A solid-state imaging device comprising:

a transparent conductive film disposed above a light-receiving surface of a photodetector; and

a stacked film disposed between the light-receiving surface and the transparent conductive film, the stacked film including at least two types of sub-film,

wherein the sub-film that is in contact with the light-receiving surface is a silicon oxide sub-film having a thickness of 50 nm or less.

10. The solid-state imaging device according to claim 8, further comprising:

a substrate having a first surface and a second surface; and

a wiring layer disposed on the first surface side of the substrate;

wherein the second surface side of the substrate functions as the light-receiving surface of the photodetector, and the solid-state imaging device is of a backside-illumination type.

11. A method for producing a solid-state imaging device, comprising the steps of:

forming an insulating film on a light-receiving surface of a photodetector formed in a substrate, the photodetector including a first region of a first conductivity type, and the insulating film having a thickness of 50 nm or less; and

forming a transparent conductive film on the insulating film.

12. A method for producing a solid-state imaging device, comprising the steps of:

forming a stacked insulating film on a light-receiving surface of a photodetector having a first region of a first conductivity type, the photodetector being formed in a substrate, the stacked insulating film including at least two types of sub-film and including a silicon oxide sub-film in contact with the light-receiving surface, and the silicon oxide sub-film having a thickness of 50 nm or less; and

forming a transparent conductive film on the stacked insulating film.

13. A camera comprising:

an optical system that guides incident light to a photodetector of a solid-state imaging device; and

a signal-processing circuit that processes an output signal of the solid-state imaging device;

wherein the solid-state imaging device includes

a transparent conductive film disposed above a light-receiving surface of the photodetector, and

an insulating film disposed between the light-receiving surface and the transparent conductive film, the insulating film having a thickness of 50 nm or less.

14. A camera comprising:

an optical system that guides incident light to a photodetector of a solid-state imaging device; and

a signal-processing circuit that processes an output signal of the solid-state imaging device;

wherein the solid-state imaging device includes

a transparent conductive film disposed above a light-receiving surface of the photodetector, and

a stacked film disposed between the light-receiving surface and the transparent conductive film, the stacked film including at least two types of sub-film,

wherein the sub-film that is in contact with the light-receiving surface is a silicon oxide sub-film having a thickness of 50 nm or less.