SURFACE-EMITTING LASER INCLUDING TWO-DIMENSIONAL PHOTONIC CRYSTAL

• US 20100142578A1
• Filed: 12/07/2009
• Published: 06/10/2010
• Est. Priority Date: 12/08/2008
• Status: Abandoned Application

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Hoshino, Katsuyuki, Nagatomo, Yasuhiro
• Application Number:
  US12/632,391
• Publication Number:
  US 20100142578A1
• Time in Patent Office: Days
• US Class Current: 372/45.10
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 5/11 Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A surface-emitting laser includes an active layer and a two-dimensional photonic crystal and has a resonance mode in an in-plane direction of the two-dimensional photonic crystal. The two-dimensional photonic crystal is composed of a semiconductor and dielectric material that has a refractive index different from that of the semiconductor and acts as the photonic crystal holes being arranged into a two-dimensional periodical structure. When the lattice constant of the two-dimensional photonic crystal is a and the radius of the dielectric material acting as the photonic crystal holes is r, r≧0.22a. The dielectric material has a refractive index that causes the coupling coefficient of the two-dimensional photonic crystal to exhibit an increasing tendency as the distance between the active layer and the two-dimensional photonic crystal shortens.

Claims

1. A surface-emitting laser comprising:

an active layer; and

a two-dimensional photonic crystal including;

a semiconductor, and

dielectric material that has a refractive index different from that of the semiconductor and acts as photonic crystal holes arranged in a two-dimensional periodical structure,

wherein the surface-emitting laser has a resonance mode in an in-plane direction of the two-dimensional photonic crystal;

r≧

0.22a, where a is the lattice constant of the two-dimensional photonic crystal, and r is the radius of the dielectric material; and

the dielectric material has a refractive index that causes the coupling coefficient of the two-dimensional photonic crystal to exhibit an increasing tendency as the distance between the active layer and the two-dimensional photonic crystal shortens.

2. The surface-emitting laser according to claim 1, wherein the refractive index of the dielectric material is between 2.0 and 2.3 inclusive.

3. The surface-emitting laser according to claim 2, wherein the radius r of the dielectric material is 35 nm or more.

4. The surface-emitting laser according to claim 2, wherein the distance between the active layer and the two-dimensional photonic crystal is 40 nm or less.