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CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS

  • US 20100143588A1
  • Filed: 12/04/2009
  • Published: 06/10/2010
  • Est. Priority Date: 12/04/2008
  • Status: Active Grant
First Claim
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1. A chemical vapor deposition reactor comprising;

  • (a) a reaction chamber having upstream and downstream directions;

    (b) a carrier support adapted to support a wafer carrier at a carrier location within the reaction chamber for rotation about an axis extending in the upstream and downstream directions;

    (c) a flow inlet element mounted to the chamber upstream of the carrier location, the inlet element having a gas distribution surface extending in X and Y horizontal directions perpendicular to one another and perpendicular to the downstream direction, the flow inlet element having a plurality of elongated gas inlets for discharging gases into the chamber, the elongated gas inlets extending parallel to one another and across the gas distribution surface in the X horizontal direction and extending across a Y-direction medial plane of the reactor, the elongated gas inlets including a plurality of first gas inlets for discharging a first reactive gas and a plurality of second gas inlets for discharging a second reactive gas, the first gas inlets being spaced apart from one another in the Y horizontal direction, the second gas inlets being spaced apart from one another in the Y horizontal direction and interspersed with the first gas inlets.

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