METHODS FOR DEPOSITING TUNGSTEN FILMS HAVING LOW RESISTIVITY FOR GAPFILL APPLICATIONS
First Claim
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1. A method of depositing tungsten on substrate in a deposition chamber, the method comprising:
- introducing a tungsten-containing precursor and a reducing agent to the deposition chamber;
depositing a first layer of tungsten on the substrate via a first chemical vapor deposition reaction between the tungsten-containing precursor and the reducing agent;
removing a top portion of the deposited tungsten layer to form an etched tungsten layer; and
after forming the etched tungsten layer, depositing a second layer of tungsten on the substrate via a second chemical vapor deposition reaction.
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Abstract
Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten along the feature sidewall. Multiple deposition-removal cycles can be used to close the feature. The filled feature is less prone to coring during CMP.
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Citations
18 Claims
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1. A method of depositing tungsten on substrate in a deposition chamber, the method comprising:
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introducing a tungsten-containing precursor and a reducing agent to the deposition chamber; depositing a first layer of tungsten on the substrate via a first chemical vapor deposition reaction between the tungsten-containing precursor and the reducing agent; removing a top portion of the deposited tungsten layer to form an etched tungsten layer; and
after forming the etched tungsten layer, depositing a second layer of tungsten on the substrate via a second chemical vapor deposition reaction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 18)
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9. A method of filling a recessed feature with tungsten, wherein the recessed feature is on a substrate in a deposition chamber, comprising:
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depositing a tungsten layer via a chemical vapor deposition reaction to partially fill the feature; removing a top portion of the deposited tungsten layer to form an etched tungsten layer; and after removing the top portion, depositing tungsten via a chemical vapor deposition reaction to further fill the feature. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification