METHODS FOR DEPOSITING TUNGSTEN FILMS HAVING LOW RESISTIVITY FOR GAPFILL APPLICATIONS

• US 20100144140A1
• Filed: 08/04/2009
• Published: 06/10/2010
• Est. Priority Date: 12/10/2008
• Status: Abandoned Application

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Humayun, Raashina, Danek, Michal, Chandrashekar, Anand
• Application Number:
  US12/535,377
• Publication Number:
  US 20100144140A1
• Time in Patent Office: Days
• US Class Current: 438/669
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten along the feature sidewall. Multiple deposition-removal cycles can be used to close the feature. The filled feature is less prone to coring during CMP.

Claims

1. A method of depositing tungsten on substrate in a deposition chamber, the method comprising:

introducing a tungsten-containing precursor and a reducing agent to the deposition chamber;

depositing a first layer of tungsten on the substrate via a first chemical vapor deposition reaction between the tungsten-containing precursor and the reducing agent;

removing a top portion of the deposited tungsten layer to form an etched tungsten layer; and

after forming the etched tungsten layer, depositing a second layer of tungsten on the substrate via a second chemical vapor deposition reaction.

2. The method of claim 1 wherein the substrate is a patterned substrate having a recessed feature and the tungsten layers are deposited within the feature to thereby wholly or partially fill the recessed feature with tungsten.

3. The method of claim 1 wherein removing the top portion of the deposited tungsten layer comprises etching between about 5% and 80% of the top thickness of the deposited tungsten layer.

4. The method of claim 1 wherein removing the top portion of the deposited tungsten layer comprises etching at least about 10% of the top thickness of the deposited tungsten layer.

5. The method of claim 1 further comprising introducing a fluorine-containing compound to a remote plasma generator upstream of the deposition chamber, generating atomic fluorine within the remote plasma generator, and flowing atomic fluorine from the remote plasma generator to the deposition chamber to remove the top portion of the deposited tungsten layer.

6. The method of claim 5 wherein the fluorine-containing compound is NF3.

7. The method of claim 1 wherein the feature has an opening of at least about 10 nm wide.

8. The method of claim 1 wherein removing a top portion of the tungsten layer comprises selectively removing portions of tungsten grains oriented perpendicularly to the surface on which the grains are deposited.

18. The method of claim 1 wherein the substrate includes a second feature filled with tungsten and wherein tungsten is removed selectively from the sidewalls of the recessed feature without removing tungsten from the second feature.

9. A method of filling a recessed feature with tungsten, wherein the recessed feature is on a substrate in a deposition chamber, comprising:

depositing a tungsten layer via a chemical vapor deposition reaction to partially fill the feature;

removing a top portion of the deposited tungsten layer to form an etched tungsten layer; and

after removing the top portion, depositing tungsten via a chemical vapor deposition reaction to further fill the feature.

10. The method of claim 9 wherein the top portion is removed uniformly throughout the feature.

11. The method of claim 9 wherein depositing tungsten via a chemical vapor deposition reaction to further fill the feature comprises at least one further deposition-removal cycle.

12. The method of claim 9 wherein further filling the feature comprises completely filling the feature.

13. The method of claim 9 wherein the feature width is about 10 nm to 1 um.

14. The method of claim 9 wherein removing a top portion of the deposited tungsten layer comprises a reaction rate-limited etch process.

15. The method of claim 9 wherein removing the top portion comprises a chemical reaction producing and removing a tungsten-containing volatile product.

16. The method of claim 9 wherein the average thickness of the etched layer at the opening is within about 10% of the average thickness of the etched layer inside the feature.

17. The method of claim 9 wherein removing a top portion of the deposited tungsten layer to form an etched tungsten layer comprises etching the sidewalls of the recessed feature.