METHODS AND SYSTEM FOR MODEL-BASED GENERIC MATCHING AND TUNING

• US 20100146475A1
• Filed: 11/05/2009
• Published: 06/10/2010
• Est. Priority Date: 11/10/2008
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Feng, Hanying, Ye, Jun, Cao, Yu
• Granted Patent: US 8,443,307 B2
• Time in Patent Office: Days
• US Class Current: 716/54
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/70 Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
• CPC Class Codes: G03F 7/70483 Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70525 Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
• CPC Class Codes: G03F 7/70991 Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
• CPC Class Codes: G06F 30/39 Circuit design at the physical level physical level design for reconfigurable circuits G06F30/347
• CPC Class Codes: G06F 30/398 Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] optical proximity correction [OPC] design processes G03F1/36

Abstract

The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.

Claims

1. A method of tuning a to-be-tuned lithographic process to a reference lithographic process, comprising:

obtaining respective lithographic process models for both the reference lithographic process and the to-be-tuned lithographic process;

identifying a set of tunable parameters of the to-be-tuned lithographic process, wherein the tunable parameters are distinct and independent from patterns to be imaged using the to-be-tuned lithographic process;

determining responses of the to-be-tuned lithographic process model to changes in the set of tunable parameters;

determining optimal changes in the tunable parameters that cause the lithographic process models to match; and

adjusting the model for the to-be-tuned lithographic process based on the determined optimal changes.

2. A method according to claim 1, wherein the step of determining optimal changes includes identifying two substantially orthogonal components of the to-be-tuned lithographic process model, and respectively determining optimal changes for the two substantially orthogonal components.

3. A method according to claim 1, wherein the step of determining optimal changes includes applying non-uniform weights to different terms in the lithographic process models.

4. A method according to claim 3, wherein the non-uniform weights are based on characteristics of a mask image used in the lithographic processes.

5. A method according to claim 1, wherein the step of determining optimal changes includes jointly optimizing contours of certain patterns to be imaged using the lithographic processes.

6. A method according to claim 5, wherein the jointly optimizing includes optimizing critical dimensions of the certain patterns.

7. A method according to claim 1, wherein the lithographic process models comprise transmission cross-coefficients (TCCs).

8. A method according to claim 7, wherein the step of determining optimal changes includes minimizing an RMS error between TCCs of the lithographic process models.

9. A method according to claim 1, wherein the lithographic process models capture substantially all the optical characteristics of the respective lithographic processes.

10. A method according to claim 1, wherein the tunable parameters correspond to settings of a photolithographic process performed by the lithographic processes.

11. A computer program product comprising a computer readable medium having instructions recorded thereon, the instructions when executed by a computer implementing a method of tuning a to-be-tuned lithographic process to a reference lithographic process, the method comprising:

obtaining respective lithographic process models for both the reference lithographic process and the to-be-tuned lithographic process;

identifying a set of tunable parameters of the to-be-tuned lithographic process;

determining responses of the to-be-tuned lithographic process model to changes in the set of tunable parameters;

determining optimal changes in the tunable parameters that cause the lithographic process models to match; and

adjusting the model for the to-be-tuned lithographic process based on the determined optimal changes.

12. A computer program product according to claim 11, wherein the step of determining optimal changes includes respectively determining optimal changes in two substantially orthogonal directions corresponding to orientation of features in a mask image used in the lithographic processes.

13. A computer program product according to claim 11, wherein the step of determining optimal changes includes applying non-uniform weights to different terms in the lithographic process models.

14. A computer program product according to claim 13, wherein the non-uniform weights are based on characteristics of a mask image used in the lithographic processes.

15. A computer program product according to claim 11, wherein the step of determining optimal changes includes jointly optimizing contours of certain patterns to be imaged using the lithographic processes.

16. A computer program product according to claim 15, wherein the jointly optimizing includes optimizing critical dimensions of the certain patterns.

17. A computer program product according to claim 11, wherein the lithographic process models comprise transmission cross-coefficients (TCCs).

18. A computer program product according to claim 17, wherein the step of determining optimal changes includes minimizing an RMS error between TCCs of the lithographic process models.

19. A computer program product according to claim 11, wherein the lithographic process models capture substantially all the optical characteristics of the respective lithographic processes.

20. A computer program product according to claim 11, wherein the tunable parameters correspond to settings of a photolithographic process performed by the lithographic processes.