LIGHT EMITTING DEVICES WITH IMPROVED LIGHT EXTRACTION EFFICIENCY

• US 20100148151A1
• Filed: 02/23/2010
• Published: 06/17/2010
• Est. Priority Date: 09/12/2000
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.)
• Inventors: Krames, Michael R., Mueller-Mach, Regina B., Mueller, Gerd O., Steranka, Frank M., Camras, Michael D., Taber, Robert C., Trottier, Troy A., Hofler, Gloria E., Uebbing, John J., Lowery, Christopher H., Snyder, Wayne L., Pocius, Douglas W.
• Granted Patent: US 8,415,694 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.

Claims

1. A device comprising:

a light emitting structure; and

a wavelength conversion member comprising a semiconductor;

wherein the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material.

2. The device of claim 1 wherein the light emitting structure comprises a III-nitride light emitting layer.

3. The device of claim 1 wherein the semiconductor comprises nanocrystals.

4. The device of claim 1 wherein the semiconductor comprises quantum dots.

5. The device of claim 1 wherein the semiconductor comprises a III-V semiconductor.

6. The device of claim 1 wherein the semiconductor comprises a II-VI semiconductor.

7. The device of claim 1 wherein the wavelength conversion member is embedded in the bonding material.

8. The device of claim 1 wherein the bonding material comprises one of nanocrystals, glass, high index glass, metal oxide, metal fluoride, lead oxide, and tungsten oxide.

9. The device of claim 1 wherein the bonding material comprises one of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, and mixtures or alloys thereof.

10. A device comprising:

a light emitting structure; and

a wavelength conversion member comprising a semiconductor;

wherein the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.

11. The device of claim 10 wherein the light emitting structure comprises a III-nitride light emitting layer.

12. The device of claim 10 wherein the semiconductor comprises nanocrystals.

13. The device of claim 10 wherein the semiconductor comprises quantum dots.

14. The device of claim 10 wherein the semiconductor comprises a III-V semiconductor.

15. The device of claim 10 wherein the semiconductor comprises a II-VI semiconductor.

16. The device of claim 10 wherein the wavelength conversion member is embedded in the bonding material.

17. The device of claim 10 wherein the bonding material comprises one of nanocrystals, glass, high index glass, metal oxide, metal fluoride, lead oxide, and tungsten oxide.

18. The device of claim 10 wherein the bonding material comprises one of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, and mixtures or alloys thereof.