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Semiconductor device and method of manufacturing semiconductor device

  • US 20100148171A1
  • Filed: 12/14/2009
  • Published: 06/17/2010
  • Est. Priority Date: 12/15/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a first interconnect layer which includes an insulating layer formed over said semiconductor substrate, and a first interconnect filled in a surficial portion of said insulating layer;

    a semiconductor layer positioned over said first interconnect layer;

    a gate insulating film positioned over or below said semiconductor layer; and

    a gate electrode positioned on the opposite side of said semiconductor layer while placing said gate insulating film in between.

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