Semiconductor device and method of manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a first interconnect layer which includes an insulating layer formed over said semiconductor substrate, and a first interconnect filled in a surficial portion of said insulating layer;
a semiconductor layer positioned over said first interconnect layer;
a gate insulating film positioned over or below said semiconductor layer; and
a gate electrode positioned on the opposite side of said semiconductor layer while placing said gate insulating film in between.
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Accused Products
Abstract
A semiconductor device of the present invention has a first interconnect layer formed over the semiconductor substrate, and a semiconductor element; the first interconnect layer has an insulating layer, and a first interconnect filled in a surficial portion of the insulating layer; the semiconductor element has a semiconductor layer, a gate insulating film, and a gate electrode; the semiconductor layer is positioned over the first interconnect layer; the gate insulating film is positioned over or below semiconductor layer; and the gate electrode is positioned on the opposite side of the semiconductor layer while placing the gate insulating film in between.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a first interconnect layer which includes an insulating layer formed over said semiconductor substrate, and a first interconnect filled in a surficial portion of said insulating layer; a semiconductor layer positioned over said first interconnect layer; a gate insulating film positioned over or below said semiconductor layer; and a gate electrode positioned on the opposite side of said semiconductor layer while placing said gate insulating film in between. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a semiconductor device comprising:
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forming, over a semiconductor substrate, a first interconnect layer which includes an insulating layer, and a first interconnect filled in a surficial portion of said insulating layer; forming, over said first interconnect layer, a gate insulating film which is positioned over said first interconnect; forming a semiconductor layer over said gate insulating film; and forming source-and-drain regions in said semiconductor layer. - View Dependent Claims (14, 15, 17, 18, 19, 20)
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16. A method of manufacturing a semiconductor device comprising:
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forming, over a semiconductor substrate, a first interconnect layer which includes an insulating layer, and a first interconnect filled in a surficial portion of said insulating layer; forming a semiconductor layer over said first interconnect layer; forming a gate insulating film over said semiconductor layer; forming a gate electrode over said gate insulating film; and forming source-and-drain regions in said semiconductor layer.
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Specification