High Luminous Flux Warm White Solid State Lighting Device

• US 20100148191A1
• Filed: 12/16/2008
• Published: 06/17/2010
• Est. Priority Date: 12/16/2008
• Status: Active Grant

• Current Assignee: LEDnovation, Inc.
• Original Assignee: LEDnovation, Inc.
• Inventors: Zhai, Jinhui, Bui, Thong, Morejon, Israel
• Granted Patent: US 7,834,372 B2
• Time in Patent Office: Days
• US Class Current: 257/88
• CPC Class Codes: F21V 3/00 Globes; Bowls; Cover glasses with refracting properties F21V5/00; with reflecting properties F21V7/00; characterised by cooling arrangements F21V29/506
• CPC Class Codes: F21V 9/02 for simulating daylight F21V9/04, F21V9/06 take precedence
• CPC Class Codes: F21Y 2115/10 Light-emitting diodes [LED]

Abstract

A high luminous flux warm white solid state lighting device with a high color rendering is disclosed. The device comprising two groups of semiconductor light emitting components to emit and excite four narrow-band spectrums of lights at high luminous efficacy, wherein the semiconductor light emitting components are directly mounted on a thermal effective dissipation member; a mixing cavity for blending the multi-spectrum of lights; a back-transferred light recycling member deposited on top of an LED driver and around the semiconductor light emitters; and a diffusive member to diffuse the mixture of output light from the solid state lighting device. The solid state lighting device produces a warm white light with luminous efficacy at least 80 lumens per watt and a color rendering index at least 85 for any lighting application.

Claims

1. A solid state lighting device comprising:

a first group of semiconductor light emitting components emitting a first spectrum of primary light;

a first wavelength down-conversion layer on top of said first group of semiconductor light emitting components exciting a second spectrum of yellow light having a narrow bandwidth;

a second wavelength down-conversion layer on top of said first wavelength down-conversion layer exciting a third spectrum of light having a peak wavelength between said first spectrum of primary light and said second spectrum of yellow light;

a second group of semiconductor light emitting components emitting a fourth spectrum of light having a peak wavelength longer than said first spectrum of primary light and said second spectrum of yellow light;

a color mixing cavity having a diffusive output window mixing said first spectrum of primary light, said second spectrum of yellow light, said third spectrum of light and said fourth spectrum of light;

a light recycling reflector member around an interior wall of said solid state lighting device, said light recycling reflector member surrounding said first group of semiconductor light emitting components and said second group of semiconductor light emitting components; and

a power line electrically connected to said first group of semiconductor light emitting components and said second group of semiconductor light emitting components.

2. The solid state lighting device according to claim 1, further comprising:

said first spectrum of primary light having a peak wavelength range from about 440 nm to 465 nm;

said second spectrum of yellow light having a peak wavelength range from about 550 nm to 575 nm and a narrow bandwidth with full width at half maximum less than 75 nm;

said third spectrum of light having a peak wavelength range from about 525 nm to 540 nm and a narrow bandwidth with full width at half maximum less than 75 nm; and

said fourth spectrum of light having a peak wavelength range from about 610 nm to 620 nm and a narrow bandwidth with full width at half maximum less than 25 nm.

3. The solid state lighting device according to claim 1, further comprising:

said first group of semiconductor light emitting components emitting a near-UV primary light having a peak wavelength range from about 380 nm to 420 nm; and

said first wavelength down-conversion layer comprising a mixture of blue quantum dots, green quantum dots and yellow quantum dots, said first wavelength down-conversion layer exciting a blue spectrum of light having a peak wavelength from about 440 nm to 465 nm, a green spectrum of light having a peak wavelength from about 525 nm to 540 nm and a yellow spectrum of light having a peak wavelength from about 550 nm to 575 nm and a narrow bandwidth with full width at half maximum less than 75 nm.

4. The solid state lighting device according to claim 1, wherein said first group of semiconductor light emitting components further comprising:

a semiconductor light emitter emitting a spectrum of primary blue light;

a yellow wavelength conversion layer on top of said semiconductor light emitter exciting a spectrum of yellow light having a peak wavelength from about 550 nm to 575 nm and a narrow bandwidth with full width at half maximum less than 75 nm; and

a green wavelength conversion layer on top of said yellow wavelength conversion layer exciting a spectrum of green light having a peak wavelength from about 525 nm to 540 nm.

5. The solid state lighting device according to claim 1, wherein said second group of semiconductor light emitting components further comprising a green semiconductor light emitter and a reddish orange semiconductor light emitter emitting a spectrum of yellow orange light, said green semiconductor light emitter and said reddish orange semiconductor light emitter being packaged on a single substrate chip.

6. The solid state lighting device according to claim 1, further comprising:

a body, said body having a side wall;

said first group of semiconductor light emitting components being packaged on said side wall of said body;

said second group of semiconductor light emitting components being packaged on said side wall of said body; and

a reflective member positioned under said side wall of said body.

7. The solid state lighting device according to claim 1, wherein said diffusive output window further comprising a dome shape.

8. The solid state lighting device according to claim 1, further comprising a wavelength conversion layer on top of said light recycling reflector member.

9. A solid state lighting device comprising:

a substrate;

a first group of semiconductor light emitting components being packaged on a single light emitting device on said substrate, said first group of semiconductor light emitting components emitting a first spectrum of primary light;

a first wavelength down-conversion layer covering said first group of semiconductor light emitting components and covering said substrate, said first wavelength down-conversion layer exciting a second spectrum of yellow light having a narrow bandwidth with full width at half maximum less than 75 nm;

a second wavelength down-conversion layer on top of said first wavelength down-conversion layer exciting a third spectrum of light having a peak wavelength between said first spectrum of primary light and said second spectrum of yellow light;

a second group of semiconductor light emitting components emitting a fourth spectrum of light having a peak wavelength longer than said first spectrum of primary light, said second spectrum of yellow light and said third spectrum of light;

a color mixing cavity having a diffusive output window mixing said first spectrum of primary light, said second spectrum of yellow light, said third spectrum of light and said fourth spectrum of light;

a light recycling reflector member; and

a power line electrically connected to said first group of semiconductor light emitting components and said second group of semiconductor light emitting components.

10. The solid state lighting device according to claim 9, further comprising:

said first spectrum of primary light having a peak wavelength range from about 440 nm to 465 nm;

said first wavelength conversion layer and said second wavelength conversion layer having YAG or Silicate based phosphor micro-particles; and

said third spectrum of light having a peak wavelength range from about 525 nm to 540 nm and a narrow bandwidth with full width at half maximum less than 75 nm; and

said fourth spectrum of light having a peak wavelength range from about 610 nm to 620 nm and a narrow bandwidth with full width at half maximum less than 25 nm.

11. The solid state lighting device according to claim 9, wherein said first wavelength conversion layer and said second wavelength conversion layer further comprising a strontium calcium thiogallate phosphor doped with divalent europium.

12. The solid state lighting device according to claim 9, wherein said first wavelength conversion layer and said second wavelength conversion layer further comprising a nanocrystal coating.

13. The solid state lighting device according to claim 9, further comprising a reflective coating on top of said substrate.

14. The solid state lighting device according to claim 9, further comprising a short-pass dichroic filter on top of said first group of semiconductor light emitting components.

15. The solid state lighting device according to claim 9, further comprising a transparent encapsulation resin between said first wavelength down-conversion layer and said second wavelength down-conversion layer.

16. The solid state lighting device according to claim 9, further comprising a dome lens on top of said second wavelength down-conversion layer.

17. A solid state lighting device comprising:

a substrate;

a group of semiconductor light emitting components being packaged on a single light emitting device on said substrate, said group of semiconductor light emitting components emitting a short wavelength first spectrum of primary light and a long wavelength second spectrum of light;

a first wavelength down-conversion layer covering said group of semiconductor light emitting components and covering said substrate, said first wavelength down-conversion layer exciting a third spectrum of yellow light having a narrow bandwidth;

a second wavelength down-conversion layer on top of said first wavelength down-conversion layer exciting a fourth spectrum of light;

a color mixing cavity having a diffusive output window mixing said short wavelength first spectrum of primary light, said long wavelength second spectrum of light, said third spectrum of yellow light and said fourth spectrum of light;

a light recycling reflector member; and

a power line electrically connected to said group of semiconductor light emitting components.

18. The solid state lighting device according to claim 17, further comprising:

said short wavelength first spectrum of primary light having a peak wavelength range from about 440 nm to 465 nm;

said long wavelength second spectrum of light having a peak wavelength range from about 610 nm to 620 nm;

said third spectrum of light having a peak wavelength range from about 550 nm to 575 nm and a narrow bandwidth with full width at half maximum less than 75 nm; and

said fourth spectrum of light having a peak wavelength range from about 525 nm to 540 nm and a narrow bandwidth with full width at half maximum less than 75 nm.

19. The solid state lighting device according to claim 17, further comprising a reflective coating on top of said substrate.

20. The solid state lighting device according to claim 17, further comprising a dome lens on top of said second wavelength conversion layer.