LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

• US 20100148198A1
• Filed: 07/20/2009
• Published: 06/17/2010
• Est. Priority Date: 12/12/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kojima, Akihiro, SUGIZAKI, Yoshiaki, Ishikawa, Masayuki, Shibata, Hideki, Tamura, Hideo, Komatsu, Tetsuro
• Granted Patent: US 8,110,421 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/02375 Top view
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05012 in top view
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05555 being circular or elliptic
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/06132 being non uniform, i.e. having a non uniform pitch across the array
• CPC Class Codes: H01L 2224/06152 being non uniform, i.e. having a non uniform pitch across the array
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13599 Material
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29599 Material
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 24/02 Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/12 : Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2933/0016 : relating to electrodes
• CPC Class Codes: H01L 2933/0033 : relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 : relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0066 : relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/34 : containing only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 33/38 : with a particular shape
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/50 : Wavelength conversion elements
• CPC Class Codes: H01L 33/58 : Optical field-shaping elements
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method for manufacturing a light emitting device includes: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal on the dielectric film and an exposed surface of the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed.

Claims

1. A method for manufacturing a light emitting device, comprising:

forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate;

forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface;

forming a seed metal on the dielectric film and an exposed surface of the first and second openings;

forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal;

separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and

forming a resin in a space from which the seed metal is removed.

2. The method according to claim 1, further comprising:

forming a p-side metal pillar and an n-side metal pillar on the p-side metal interconnect layer and the n-side metal interconnect layer, respectively.

3. The method according to claim 2, wherein the forming a multilayer body includes forming multilayer bodies spaced from each other.

4. The method according to claim 2, wherein the forming a p-side metal interconnect layer and an n-side metal interconnect layer includes forming by electrolytic plating.

5. The method according to claim 2, wherein the forming a p-side metal pillar and an n-side metal pillar includes forming by electrolytic plating.

6. The method according to claim 2, further comprising:

forming a lens material on the first surface side of the multilayer body, further forming a mask material on the lens material, and then etching the lens material under a condition that the lens material has a lower selective ratio than the mask material.

7. The method according to claim 2, further comprising:

applying a liquid glass on the first surface side of the multilayer body, and forming a lens by mold press.

8. The method according to claim 2, wherein

the forming a multilayer body includes forming a first and second multilayer bodies spaced from and being adjacent to each other,

the forming a p-side metal interconnect layer and an n-side metal interconnect layer includes connectedly forming a first p-side metal interconnect layer provided on the first multilayer body side and a second n-side metal interconnect layer provided on the second multilayer body side, and

the separating the seed metal into a p-side seed metal and an n-side seed metal includes removing the seed metal exposed between a first n-side metal interconnect layer provided on the first multilayer body side and the first p-side metal interconnect layer to separate it into a first n-side seed metal and a first p-side seed metal, and removing the seed metal exposed between a second p-side metal interconnect layer provided on the second multilayer body side and the second n-side metal interconnect layer to separate it into a second p-side seed metal and a second n-side seed metal.

9. A method for manufacturing a light emitting device, comprising:

forming a light emitting element by forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface of a translucent substrate, and by forming a p-side electrode and an n-side electrode on the multilayer body, the first surface of the translucent substrate including a groove which surrounds the multilayer body;

forming a dielectric film on the second surface side, the dielectric film having a first and second openings on the p-side electrode and the n-side electrode;

forming a seed metal on the dielectric film and an exposed surface of the first and second openings;

forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal;

forming a p-side metal pillar and an n-side metal pillar on the p-side metal interconnect layer and the n-side metal interconnect layer, respectively;

separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer;

forming a resin in a space from which the seed metal is removed; and

grinding the translucent substrate from a second surface opposite to the first surface so as to reach a bottom surface of the groove.

10. A light emitting device comprising:

a multilayer body having a first surface and a second surface opposite to the first surface and including a light emitting layer;

a p-side electrode and an n-side electrode provided on the second surface of the multilayer body;

a dielectric film having openings to which the p-side electrode and the n-side electrode are exposed;

a p-side extraction electrode including a p-side seed metal provided on the p-side electrode and a p-side metal interconnect layer provided on the p-side seed metal;

an n-side extraction electrode including an n-side seed metal provided on the n-side electrode and an n-side metal interconnect layer provided on the n-side seed metal; and

a resin layer provided around the p-side extraction electrode and the n-side extraction electrode.

11. The light emitting device according to claim 10, wherein

the p-side extraction electrode further includes a p-side metal pillar provided on the p-side metal interconnect layer, and

the n-side extraction electrode further includes an n-side metal pillar provided on the n-side metal interconnect layer.

12. The light emitting device according to claim 11, wherein the p-side metal interconnect layer, the n-side metal interconnect layer, the p-side metal pillar, and the n-side metal pillar are made of copper.

13. The light emitting device according to claim 11, further comprising:

a phosphor layer provided on the first surface side of the multilayer body and configured to absorb emission light from the light emitting layer and emit converted light having a wavelength different from the wavelength of the emission light.

14. The light emitting device according to claim 13, further comprising:

a lens provided on the phosphor layer and configured to transmit the emission light and the converted light.

15. The light emitting device according to claim 13, further comprising:

a lens provided between the multilayer body and the phosphor layer and configured to transmit the emission light.

16. The light emitting device according to claim 11, wherein one of the p-side electrode and the n-side electrode is provided on the non-emitting region of the multilayer body, and an area of the one electrode is smaller than an area of any of the other electrode and the metal pillar of the extraction electrode provided on the one electrode.

17. The light emitting device according to claim 11, further comprising:

a p-side solder ball and an n-side solder ball provided on the p-side metal pillar and the n-side metal pillar and being generally equal in size.

18. The light emitting device according to claim 11, wherein the p-side metal interconnect layer and the n-side metal interconnect layer are separated from each other by a separating region having a meandered shape in a plan view.

19. The light emitting device according to claim 11, wherein

the multilayer body includes a first and second multilayer bodies spaced from and being adjacent to each other, and being substantially equal in composition and shape, and

a first p-side electrode provided on the first multilayer body side and a second n-side electrode provided on the second multilayer body side are connected to each other.

20. The light emitting device according to claim 11, wherein a surface of the resin is substantially coplanar with a surface of each of the p-side metal pillar and the n-side metal pillar.