Graded high germanium compound films for strained semiconductor devices
First Claim
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1. A method of forming a crystalline compound film, comprising:
- selectively forming a low germanium content seed layer;
selectively forming a transition layer on the low germanium content seed layer;
the transition layer formed while decrementing a process temperature from a first temperature to a second temperature; and
selectively forming a high germanium content layer on the transition layer.
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Abstract
Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.
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Citations
20 Claims
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1. A method of forming a crystalline compound film, comprising:
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selectively forming a low germanium content seed layer; selectively forming a transition layer on the low germanium content seed layer;
the transition layer formed while decrementing a process temperature from a first temperature to a second temperature; andselectively forming a high germanium content layer on the transition layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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forming a gate stack and a pair of spacers on a multi-gate body, wherein the spacers are formed on laterally opposite sides of the gate stack; etching the multi-gate body at regions adjacent to the spacers; and selectively depositing a graded high-germanium content silicon germanium stack to form a source region and a drain region directly adjacent to the multi-gate body. - View Dependent Claims (9, 10, 11)
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12. The method of claim 12, wherein the transition layer is formed beginning with a first temperature selected from a range between 700°
- C. and 800°
C. - View Dependent Claims (13)
- C. and 800°
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14. A transistor comprising:
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a gate stack formed on a substrate; spacers formed on laterally opposite sides of the gate stack; and a source region and a drain region formed on the substrate adjacent and subjacent to the spacers, the source region and the drain region comprising a silicon-germanium seed layer, a transition layer, and a high germanium content layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification