SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
First Claim
1. A semiconductor device, comprising:
- a semiconductor substrate;
an interlayer insulating film formed on the semiconductor substrate;
a first inductor interconnect layer having a spiral pattern, formed to be embedded in a top portion of the interlayer insulating film;
a barrier insulating film formed to cover the interlayer insulating film and the first inductor interconnect layer, the barrier insulating film having at least one connecting groove extending vertically therethrough and running along the first inductor interconnect layer; and
a second inductor interconnect layer formed on the barrier insulating film to run along the first inductor interconnect layer and fill the connecting groove to be electrically connected with the first inductor interconnect layer, whereinthe second inductor interconnect layer has at least one concave groove formed on the top to run along a length direction of the second inductor interconnect layer.
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Accused Products
Abstract
A semiconductor device includes: a semiconductor substrate; an interlayer insulating film formed on the semiconductor substrate; a first inductor interconnect layer having a spiral pattern, formed to be embedded in a top portion of the interlayer insulating film; a barrier insulating film formed to cover the interlayer insulating film and the first inductor interconnect layer, the barrier insulating film having at least one connecting groove running along the first inductor interconnect layer; and a second inductor interconnect layer formed on the barrier insulating film to run along the first inductor interconnect layer and fill the connecting groove to be electrically connected with the first inductor interconnect layer. The second inductor interconnect layer has at least one concave groove formed on the top to run along the length thereof.
10 Citations
13 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; an interlayer insulating film formed on the semiconductor substrate; a first inductor interconnect layer having a spiral pattern, formed to be embedded in a top portion of the interlayer insulating film; a barrier insulating film formed to cover the interlayer insulating film and the first inductor interconnect layer, the barrier insulating film having at least one connecting groove extending vertically therethrough and running along the first inductor interconnect layer; and a second inductor interconnect layer formed on the barrier insulating film to run along the first inductor interconnect layer and fill the connecting groove to be electrically connected with the first inductor interconnect layer, wherein the second inductor interconnect layer has at least one concave groove formed on the top to run along a length direction of the second inductor interconnect layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fabricating a semiconductor device, comprising the steps of:
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(a) forming an interlayer insulating film on a semiconductor substrate; (b) forming a first inductor interconnect layer having a spiral pattern to be embedded in a top portion of the interlayer insulating film; (c) forming a barrier insulating film covering the interlayer insulating film and the first inductor interconnect layer; (d) forming at least one connecting groove through the barrier insulating film to extend vertically therethrough and run along the first inductor interconnect layer; and (e) forming a second inductor interconnect layer on the barrier insulating film to run along the first inductor interconnect layer and fill the connecting groove to be electrically connected with the first inductor interconnect layer, wherein in the step (e), at least one concave groove is formed on the top of the second inductor interconnect layer to run along the length of the second inductor interconnect layer. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification