Stacked Die Parallel Plate Capacitor
First Claim
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1. A stacked integrated circuit having a first die with a first surface and a second die with a second surface facing the first surface, the stacked integrated circuit comprising:
- a capacitor formed by a first conducting plate on a region of the first surface, a second conducting plate on a region of the second surface substantially aligned with the first conducting plate, and a dielectric between the first conducting electrode and the second conducting electrode.
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Abstract
A stacked integrated circuit having a first die with a first surface and a second die with a second surface facing the first surface, the stacked integrated circuit includes a capacitor. The capacitor is formed by a first conducting plate on a region of the first surface, a second conducting plate on a region of the second surface substantially aligned with the first conducting plate, and a dielectric between the first conducting electrode and the second conducting electrode.
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Citations
20 Claims
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1. A stacked integrated circuit having a first die with a first surface and a second die with a second surface facing the first surface, the stacked integrated circuit comprising:
a capacitor formed by a first conducting plate on a region of the first surface, a second conducting plate on a region of the second surface substantially aligned with the first conducting plate, and a dielectric between the first conducting electrode and the second conducting electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A stacked integrated circuit, comprising:
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a first die, having a first surface comprising a first conducting plate; a second die stacked with the first die, the second die having a second surface facing the first surface of the first die, the second surface comprising a second conducting plate opposing the first conducting plate; and an insulator between the first die and the second die, wherein the first conducting plate, the second conducting plate, and the insulator form a capacitor. - View Dependent Claims (18, 19, 20)
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Specification