Methods for Manufacturing RFID Tags and Structures Formed Therefrom
First Claim
1. A device, comprising:
- a) a metal antenna and/or inductor;
b) a dielectric layer thereon, configured to support and insulate integrated circuitry from said metal antenna and/or inductor;
c) a plurality of diodes and a plurality of thin film transistors on said dielectric layer, said diodes having at least one semiconductor layer in common with said thin film transistors; and
d) a plurality of capacitors in electrical communication with said metal antenna and/or inductor and at least some of said diodes, said plurality of capacitors having at least one semiconductor layer in common with said plurality of diodes and/or at least one metal layer in common with contacts to said diodes and thin film transistors.
3 Assignments
0 Petitions
Accused Products
Abstract
Radio frequency identification (RFID) tags and processes for manufacturing the same. The RFID device generally includes (1) a metal antenna and/or inductor; (2) a dielectric layer thereon, to support and insulate integrated circuitry from the metal antenna and/or inductor; (3) a plurality of diodes and a plurality of transistors on the dielectric layer, the diodes having at least one layer in common with the transistors; and (4) a plurality of capacitors in electrical communication with the metal antenna and/or inductor and at least some of the diodes, the plurality of capacitors having at least one layer in common with the plurality of diodes and/or with contacts to the diodes and transistors. The method preferably integrates liquid silicon-containing ink deposition into a cost effective, integrated manufacturing process for the manufacture of RFID circuits. Furthermore, the present RFID tags generally provide higher performance (e.g., improved electrical characteristics) as compared to tags containing organic electronic devices.
64 Citations
20 Claims
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1. A device, comprising:
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a) a metal antenna and/or inductor; b) a dielectric layer thereon, configured to support and insulate integrated circuitry from said metal antenna and/or inductor; c) a plurality of diodes and a plurality of thin film transistors on said dielectric layer, said diodes having at least one semiconductor layer in common with said thin film transistors; and d) a plurality of capacitors in electrical communication with said metal antenna and/or inductor and at least some of said diodes, said plurality of capacitors having at least one semiconductor layer in common with said plurality of diodes and/or at least one metal layer in common with contacts to said diodes and thin film transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. An integrated circuit comprising:
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a) an electrically active substrate; b) a dielectric layer on the substrate; c) a plurality of first semiconductor layer elements comprising a thin film transistor channel region in a first region of the substrate and a first diode layer element in a second region of the substrate; d) a plurality of second semiconductor layer elements comprising a second semiconductor layer in the first region of the substrate and a second diode layer element in the second region of the substrate; and e) a plurality of metal elements on or over the first semiconductor layer elements and the second semiconductor layer elements, the metal elements comprising a metal contact in the first region of the substrate and a metal gate over the thin film transistor channel region, and a diode contact in the second region of the substrate. - View Dependent Claims (14, 15, 16, 17)
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18. An integrated circuit comprising:
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a) an electrically active substrate; b) a dielectric layer on the substrate; c) a plurality of first semiconductor elements comprising a thin film transistor channel region in a first region of the substrate, a first diode layer element in a second region of the substrate, and a first capacitor plate in a third region of the substrate; d) a plurality of second semiconductor layer elements comprising a second semiconductor layer in the first region of the substrate and a second diode layer element in the second region of the substrate; and e) a plurality of metal elements on or over the first semiconductor layer elements and the second semiconductor layer elements, the metal elements comprising a metal contact in the first region of the substrate and a metal gate over the thin film transistor channel region, a diode contact in the second region of the substrate, and a second capacitor plate in the third region of the substrate. - View Dependent Claims (19, 20)
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Specification