Method and System for Forming Resonators Over CMOS
First Claim
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1. A semiconductor substrate comprising:
- complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate;
an electrode disposed outwardly from the CMOS circuitry and electrically coupled to the CMOS circuitry; and
a resonator disposed outwardly from the electrode, the resonator operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.
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Abstract
In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.
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Citations
20 Claims
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1. A semiconductor substrate comprising:
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complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate; an electrode disposed outwardly from the CMOS circuitry and electrically coupled to the CMOS circuitry; and a resonator disposed outwardly from the electrode, the resonator operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate comprising complementary metal-oxide-semiconductor (CMOS) circuitry; and a plurality of resonators, each resonator overlaying, and spaced apart from, a respective portion of the CMOS circuitry, and each resonator having a corresponding resonance frequency. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method comprising:
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forming complementary metal-oxide-semiconductor (CMOS) circuitry outwardly from a substrate, the CMOS circuitry capable of providing an electric signal that contributes to at least a portion of an electrostatic field; forming a sacrificial layer outwardly from the CMOS circuitry; forming a resonator outwardly from the sacrificial layer; and removing at least a portion of the sacrificial layer disposed inwardly from the resonator such that the resonator is operable to oscillate at a resonance frequency in response, at least in part, to the electrostatic field. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification