Mems Integrated Circuit With Polymerized Siloxane Layer
First Claim
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1. A MEMS integrated circuit comprising:
- a silicon substrate having a passivated CMOS layer;
a MEMS layer disposed on said passivated CMOS layer, wherein said CMOS layer comprises drive circuitry for actuating actuator devices in said MEMS layer; and
a polymer layer disposed on said MEMS layer, said polymer layer comprising a polymeric material selected from the group consisting of;
polymerized siloxanes.
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Abstract
A MEMS integrated circuit comprises: a silicon substrate having a passivated CMOS layer, a MEMS layer disposed on the passivated CMOS layer, and a polymer layer disposed on the MEMS layer. The CMOS layer comprises drive circuitry for actuating actuator devices in the MEMS layer and the polymer layer comprises a polymerized siloxane.
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Citations
18 Claims
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1. A MEMS integrated circuit comprising:
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a silicon substrate having a passivated CMOS layer; a MEMS layer disposed on said passivated CMOS layer, wherein said CMOS layer comprises drive circuitry for actuating actuator devices in said MEMS layer; and a polymer layer disposed on said MEMS layer, said polymer layer comprising a polymeric material selected from the group consisting of;
polymerized siloxanes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification