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Mems Integrated Circuit With Polymerized Siloxane Layer

  • US 20100149266A1
  • Filed: 02/11/2010
  • Published: 06/17/2010
  • Est. Priority Date: 03/12/2007
  • Status: Active Grant
First Claim
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1. A MEMS integrated circuit comprising:

  • a silicon substrate having a passivated CMOS layer;

    a MEMS layer disposed on said passivated CMOS layer, wherein said CMOS layer comprises drive circuitry for actuating actuator devices in said MEMS layer; and

    a polymer layer disposed on said MEMS layer, said polymer layer comprising a polymeric material selected from the group consisting of;

    polymerized siloxanes.

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