EUV Mask Inspection System
First Claim
1. A mask inspection system comprising:
- an extreme ultraviolet (EUV) illumination source configured to illuminate an EUV radiation beam onto a target portion of a mask;
an optical system configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask; and
an image sensor configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam.
1 Assignment
0 Petitions
Accused Products
Abstract
Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.
65 Citations
20 Claims
-
1. A mask inspection system comprising:
-
an extreme ultraviolet (EUV) illumination source configured to illuminate an EUV radiation beam onto a target portion of a mask; an optical system configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask; and an image sensor configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method for inspecting a mask for defects, comprising:
-
illuminating an extreme ultraviolet (EUV) radiation beam onto a target portion of the mask; receiving at least a portion of a reflected EUV radiation beam from the target portion of the mask; and detecting an aerial image corresponding to the portion of the reflected EUV radiation beam. - View Dependent Claims (9, 10, 11, 12, 13)
-
-
14. The method of 8, wherein illuminating the EUV radiation beam comprises substantially simultaneously illuminating the EUV radiation beam onto a mask in a patterning device of a lithographic apparatus and onto a mask in a mask inspection device.
-
15. A lithography system, comprising:
-
a first illumination system configured to condition a first extreme ultraviolet (EUV) radiation beam; a support constructed to support a first patterning device, the first patterning device configured to impart the first EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to focus the patterned radiation beam onto the substrate; and a mask inspection system comprising, a second illumination system configured to illuminate a second EUV radiation beam onto a target portion of a second patterning device, an optical system configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the second patterning device, and an image sensor configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. - View Dependent Claims (16)
-
-
17. A lithography system, comprising:
-
an illumination system configured to condition a first extreme ultraviolet (EUV) radiation beam and to illuminate a second EUV radiation beam onto a target portion of a first patterning device; a support constructed to support a second patterning device, the second patterning device configured to impart the first EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam;
a substrate table constructed to hold a substrate;a projection system configured to focus the patterned radiation beam onto the substrate; and a mask inspection system comprising, an optical system configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the first patterning device, and an image sensor configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. - View Dependent Claims (18, 19, 20)
-
Specification