SPECTRAL PURITY FILTER FOR MULTI-LAYER MIRROR, LITHOGRAPHIC APPARATUS INCLUDING SUCH MULTI-LAYER MIRROR, METHOD FOR ENLARGING THE RATIO OF DESIRED RADIATION AND UNDESIRED RADIATION, AND DEVICE MANUFACTURING METHOD
First Claim
1. A multi-layer mirror, comprising:
- a multi-layer stack, the multi-layer stack comprising a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack, the spectral filter top layer comprisinga first spectral purity enhancement layer comprising a first material m1 and having a first layer thickness d1;
an intermediate layer comprising a second material m2 and having a second layer thickness d2, the intermediate layer being arranged on the multi-layer stack top layer, wherein the first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF, the second material comprises a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.
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Abstract
A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m1 and has a first layer thickness d1, an intermediate layer that includes a second material m2 and has a second layer thickness d2. The intermediate layer is arranged on the multi-layer stack top layer. The first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF. The second material includes a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.
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Citations
20 Claims
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1. A multi-layer mirror, comprising:
a multi-layer stack, the multi-layer stack comprising a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack, the spectral filter top layer comprising a first spectral purity enhancement layer comprising a first material m1 and having a first layer thickness d1; an intermediate layer comprising a second material m2 and having a second layer thickness d2, the intermediate layer being arranged on the multi-layer stack top layer, wherein the first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF, the second material comprises a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A lithographic apparatus comprising a multi-layer mirror comprising a multi-layer stack, the multi-layer stack comprising a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack, the spectral filter top layer comprising a first spectral purity enhancement layer comprising a first material m1 and having a first layer thickness d1;
- an intermediate layer comprising a second material m2 and having a second layer thickness d2, the intermediate layer being arranged on the multi-layer stack top layer, wherein the first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF, the second material comprises a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.
- View Dependent Claims (16)
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17. A method for enlarging the ratio of radiation having a wavelength selected from a first wavelength range of 5-20 nm and radiation having a wavelength selected from a second wavelength range of 100-400 nm in a beam of radiation of a source emitting radiation in both wavelength ranges, the method comprising reflecting at least part of the beam of radiation on a multi-layer mirror comprising a multi-layer stack, the multi-layer stack comprising a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack, the spectral filter top layer comprising a first spectral purity enhancement layer comprising a first material m1 and having a first layer thickness d1;
- an intermediate layer comprising a second material m2 and having a second layer thickness d2, the intermediate layer being arranged on the multi-layer stack top layer, wherein the first material is selected from SIN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF, the second material comprises a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.
- View Dependent Claims (18, 19)
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20. A device manufacturing method, comprising:
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providing a beam of radiation; patterning the beam of radiation; projecting the patterned beam of radiation onto a target portion of a substrate; enlarging the ratio of radiation having a wavelength selected from a first wavelength range of 5-20 nm and radiation having a wavelength selected from a second wavelength range of 100-400 nm by reflecting at least part of the beam of radiation on a multi-layer mirror comprising a multi-layer stack, the multi-layer stack comprising a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack, the spectral filter top layer comprising a first spectral purity enhancement layer comprising a first material m1 and having a first layer thickness d1;
an intermediate layer comprising a second material m2 and having a second layer thickness d2, the intermediate layer being arranged on the multi-layer stack top layer, wherein the first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF, the second material comprises a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.
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Specification