Semiconductor Lighting Device With Wavelength Conversion on Back-Transferred Light Path

• US 20100149814A1
• Filed: 12/17/2008
• Published: 06/17/2010
• Est. Priority Date: 12/17/2008
• Status: Active Grant

• Current Assignee: LEDnovation, Inc.
• Original Assignee: LEDnovation, Inc.
• Inventors: Morejon, Israel J., Zhai, Jinhui, Bui, Thong
• Granted Patent: US 8,169,135 B2
• Time in Patent Office: Days
• US Class Current: 362/293
• CPC Class Codes: F21K 9/64 using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

A semiconductor lighting device includes a semiconductor light emitter packaged on a reflective substrate to emit a first light and a remote wavelength conversion layer on a back-transferred light path to convert the back-transferred first light into a forward second light. A filter is disposed on a light emitting forward path with a space to the semiconductor light emitter to reflect back at least a portion of the first light. A diffusive member may be positioned outside of the filter to diffuse the forward passing light before it exits from the semiconductor lighting device. As a second aspect of this invention, a solid state lighting device includes a short wavelength semiconductor emitter; a long wavelength semiconductor emitter with wavelength in reddish orange range; a filter on a light emitting forward path to reflect back a portion of short wavelength first light; and a wavelength conversion component on a back-transferred light path. The device produces a mixture of warm white light in a correlated color temperature from 2700˜3500 K and color rendering index at least 85 for any indoor lighting application.

Claims

1. A semiconductor lighting device comprising:

a semiconductor light emitting component packaged on a reflective substrate emitting a primary first light;

a filter disposed on a light emitting forward path reflecting back at least a portion of said primary first light;

a wavelength conversion layer disposed on a light back-transferred path converting back-transferred primary first light from said filter into a forward second light; and

a power line electrically connected to said semiconductor light emitting component.

2. The semiconductor lighting device according to claim 1, wherein said primary first light is a blue light having a peak wavelength range from about 430 nm to 470 nm.

3. The semiconductor lighting device according to claim 1, wherein said primary first light is a near-UV light having a peak wavelength range from about 380 nm to 420 nm.

4. The semiconductor lighting device according to claim 1, wherein said primary first light is a near-infrared light having a peak wavelength range from about 850 nm to 1300 nm.

5. The semiconductor lighting device according to claim 1, wherein said wavelength conversion layer further comprising a yellow phosphor micro-particle.

6. The semiconductor lighting device according to claim 1, wherein said wavelength conversion layer further comprising blue quantum dots and yellow quantum dots.

7. The semiconductor lighting device according to claim 1, wherein said wavelength conversion layer further comprising a wavelength up-conversion micro-particle.

8. A semiconductor light emitting device comprising:

a semiconductor light emitting component packaged on a reflective substrate emitting a first light;

a filter disposed on a light emitting forward path reflecting back at least a portion of said first light;

a first wavelength conversion layer on said reflective substrate on a light back transferred path absorbing back-transferred first light from said filter and exciting a forward second light; and

a power line electrically connected to said semiconductor light emitting component.

9. The semiconductor light emitting device according to claim 8, further comprising:

said first light is a blue light having a peak wavelength range from about 430 nm to 470 nm; and

said forward second light is a mixture of green light and orange light.

10. The semiconductor light emitting device according to claim 8, further comprising:

said first light is a near-UV light having a peak wavelength range from about 380 nm to 420 nm; and

said forward second light is a mixture of blue light, green light and red light.

11. The semiconductor light emitting device according to claim 8, further comprising a short pass dichroic tilter on top of said semiconductor light emitting component.

12. The semiconductor light emitting device according to claim 8, wherein said filter is a long pass dichroic filter.

13. The semiconductor light emitting device according to claim 8, further comprising a dome lens disposed on top of said filter.

14. The semiconductor light emitting device according to claim 8, further comprising:

said first light is a blue light having a peak wavelength range from about 430 nm to 470 nm; and

said forward second light is a yellow light having a peak wavelength range from about 550 nm to 570 nm.

15. The semiconductor light emitting device according to claim 14, further comprising a third reddish orange light.

16. The semiconductor light emitting device according to claim 15, wherein said semiconductor light emitting component further comprising:

a first group of semiconductor light emitters emitting a blue light having a peak wavelength range from about 430 nm to 470 nm; and

a second group of semiconductor light emitters emitting a reddish orange light having a peak wavelength range from about 610 nm to 620 nm.

17. The semiconductor light emitting device according to claim 15, wherein said semiconductor light emitting component further comprising a first light semiconductor blue emitter having a reddish orange phosphor layer, said first light semiconductor blue emitter exciting a reddish orange light having a peak wavelength range from about 610 nm to 620 nm.

18. The semiconductor light emitting device according to claim 15, wherein said wavelength conversion layer further comprising a mixture of yellow phosphor micro-particles and green phosphor micro-particles.

19. The semiconductor light emitting device according to claim 15, further comprising a second wavelength conversion layer on said reflective substrate on said light back transferred path absorbing back-transferred first light and exciting a third reddish orange light.

20. A solid state lighting device comprising:

a semiconductor light emitting component packaged on a reflective substrate emitting a primary first light;

a long pass dichroic filter disposed on a light emitting forward path reflecting back at least 50% of said primary first light;

a first wavelength down-conversion layer on said reflective substrate on a light back transferred path absorbing back-transferred primary first light from said long pass dichroic filter and exciting a forward second light;

a light diffuser member positioned on top of said long pass dichroic filter;

a power line electrically connected to said semiconductor light emitting component.

21. The solid state lighting device according to claim 20, further comprising:

said primary first light is a blue light having a peak wavelength range from about 430 nm to 470 nm; and

said forward second light is a yellow light having a peak wavelength range from about 550 nm to 570 nm.

22. The solid state lighting device according to claim 20, further comprising:

said primary first light is a blue light having a peak wavelength range from about 430 nm to 470 nm; and

said forward second light is a mixture of green light and orange light.

23. The solid state lighting device according to claim 20, further comprising:

said primary first light is a near-UV light having a peak wavelength range from about 380 nm to 420 nm; and

said forward second light is a mixture of blue light, green light and red light.

24. The solid state lighting device according to claim 20, further comprising a reflective coating around an interior wall of said solid state lighting device.

25. The solid state lighting device according to claim 20, wherein said wavelength down-conversion layer covers said semiconductor light emitting component.

26. The solid state lighting device according to claim 20, further comprising a shot pass dichroic filter on top of said semiconductor light emitting component.

27. The solid state lighting device according to claim 20, further comprising a second wavelength conversion layer mixed into said first wavelength down-conversion layer, said first wavelength conversion layer exciting a yellow light having a peak wavelength range from about 550 nm to 570 nm and said second wavelength conversion layer exciting a third reddish orange light having a peak wavelength range from about 610 nm to 620 nm.

28. The solid state lighting device according to claim 20, further comprising a reddish orange wavelength conversion layer deposited on top of said semiconductor light emitting component on a light back transferred path absorbing a portion of said primary first light and exciting a reddish orange light having a peak wavelength range from about 610 nm to 620 nm.

29. The solid state lighting device according to claim 20, wherein said wavelength conversion layer further comprising a multiple phosphor coated area

30. The solid state lighting device according to claim 29, wherein said multiple phosphor coated area further comprising a yellow phosphor coating area and a reddish orange phosphor coating area.

31. The solid state lighting device according to claim 20, wherein said semiconductor light emitting device further comprising:

a first group of semiconductor light emitting components packaged on said reflective substrate emitting a primary first blue light having a peak wavelength range from about 430 nm to 470 nm;

a second group of semiconductor light emitting components packaged on said reflective substrate emitting a second reddish orange light having a peak wavelength range from about 610 nm to 620 nm;

said long pass dichroic filter disposed inside of a diffusive window; and

said wavelength down-conversion layer absorbing said primary first blue light back reflected from said long pass dichroic filter and exciting a second yellow light.

32. The solid state lighting device according to claim 31, wherein said wavelength down-conversion layer is selected from the group consisting of a separated ceramic wavelength conversion plate, a lumiramic phosphor plate and a polymer phosphor film.