Fabrication of light emitting film coated fullerenes and their application for in-vivo emission
First Claim
1. A method of fabricating a coated fullerene, comprisingactivating at least a surface portion of a fullerene, andcatalyzing growth of a semiconducting material on said activated portion so as to coat said fullerene at least partially with said semiconducting material.
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Accused Products
Abstract
A nanoparticle coated with a semiconducting material and a method for making the same. In one embodiment, the method comprises making a semiconductor coated nanoparticle comprising a layer of at least one semiconducting material covering at least a portion of at least one surface of a nanoparticle, comprising: (A) dispersing the nanoparticle under suitable conditions to provide a dispersed nanoparticle; and (B) depositing at least one semiconducting material under suitable conditions onto at least one surface of the dispersed nanoparticle to produce the semiconductor coated nanoparticle. In other embodiments, the nanoparticle comprises a fullerene. Further embodiments include the semiconducting material comprising CdS or CdSe.
74 Citations
24 Claims
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1. A method of fabricating a coated fullerene, comprising
activating at least a surface portion of a fullerene, and catalyzing growth of a semiconducting material on said activated portion so as to coat said fullerene at least partially with said semiconducting material.
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4. A method of fabricating coated nanoparticles, comprising
dispersing a plurality of nanoparticles in a liquid so as to functionalize at least a surface portion of one or more of said nanoparticles, and depositing a semiconducting material on said functionalized surface portion of said one or more nanoparticles.
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5. A method of depositing semiconducting material on a fullerene, comprising
chemically functionalizing at least a surface portion of a fullerene disposed in a liquid, and catalyzing growth of a semiconducting material on the functionalized surface portion.
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13. A nanoparticle, comprising:
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a core formed at least in part of a fullerene, and a semiconducting material at least partially coating said core, wherein said semiconductor coating has a thickness in a range of about 100 nm to about 5000 nm. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A solution, comprising:
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a liquid for functionalizing at least a surface of a portion of fullerenes to facilitate growth of a semiconductor material thereon; and a plurality of fullerenes immersed in the liquid. - View Dependent Claims (21, 22, 23, 24)
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Specification