System for Contactless Cleaning, Lithographic Apparatus and Device Manufacturing Method

• US 20100151394A1
• Filed: 09/25/2009
• Published: 06/17/2010
• Est. Priority Date: 09/29/2008
• Status: Abandoned Application

• Current Assignee: ASML Netherlands BV (ASML Holding NV), Board of Trustees of The University of Illinois
• Original Assignee: Board of Trustees of The University of Illinois
• Inventors: Raju, Ramasamy, Neumann, Martin John, Lytle, Wayne Mathew, Ruzic, David Neil, Van Kampen, Maarten, Moors, Johannes Hubertus Josephina, Banine, Vadim Yevgenyevich, Scaccabarozzi, Luigi, Koster, Norbertus Benedictus
• Application Number:
  US12/567,383
• Publication Number:
  US 20100151394A1
• Time in Patent Office: Days
• US Class Current: 430/325
• CPC Class Codes: G03F 7/70925 Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

Abstract

Embodiments of the invention relate to a system for contactless cleaning of an object surface, a lithographic apparatus including the system, and a method of manufacturing a device. The system may include a He plasma source contained in a chamber and a control unit constructed to modify plasma parameters in use, such as the electron energy distribution of the plasma for causing an increase in formation of He metastables without modifying operational parameters of the plasma source. The control unit may include an electrical biasing unit constructed to apply a positive bias voltage to the object, for attracting free electrons from the plasma. The system may include a supplementary gas source, which may be either pre-mixed with He or be supplied from a further gas source. The supplementary gas may be selected based on a pre-knowledge on a type of particles to be expected on the surface of the object.

Claims

1. A system for contactless removal of a particle from a surface of an object, comprising:

a source of plasma constructed to generate He plasma in a vicinity of the surface; and

a control unit constructed to modify plasma parameters to cause an increased generation of He metastables in the He plasma without affecting the source of plasma.

2. A system according to claim 1, wherein the control unit is constructed to alter the electron energy distribution of the plasma.

3. A system according to claim 2, wherein the control unit comprises an electrical biasing unit constructed to apply an electrically positive bias to the object in a pulsed mode.

4. A system according to claim 3, wherein a duty cycle of the pulsed mode is at least 50%.

5. A system according to claim 3, wherein a duty cycle of the pulsed mode is at least 90%.

6. A system according to claim 3, wherein the electrically positive bias is in the range of 1 to 3 Volt above floating potential.

7. A system according to claim 4, wherein the electrically positive bias is in the range of 1 to 3 Volt above floating potential.

8. A system according to claim 5, wherein the electrically positive bias is in the range of 1 to 3 Volt above floating potential.

9. A system according to claim 2, wherein the control unit comprises an electrical biasing unit constructed to apply an electrically positive bias to the object in a steady-state mode.

10. A system according to claim 1, further comprising a supplementary gas conceived to undergo a chemical reaction with the particle so as to remove the particle from the surface.

11. A system according to claim 10, wherein the supplementary gas comprises molecular hydrogen, atomic hydrogen, or a combination thereof.

12. A lithographic projection apparatus comprising:

an optical system comprising optical elements configured to condition or supply a projection beam of EUV radiation; and

a system according to claim 1, constructed to clean a surface of one or more of said optical elements.

13. A device manufacturing method, comprising:

providing a beam of EUV radiation using optical elements;

projecting the beam onto a target portion of a layer of radiation-sensitive material; and

cleaning a surface of at least one optical element using He plasma, wherein a population of He metastables in the He plasma is increased without affecting a source of He plasma.

14. A device manufacturing method according to claim 13, further comprising the step of providing a supplementary gas conceived to undergo a chemical reaction with the particle for removing the particle from the surface.