Methods of Forming Integrated Circuit Packages, and Methods of Assembling Integrated Circuit Packages

• US 20100151630A1
• Filed: 03/01/2010
• Published: 06/17/2010
• Est. Priority Date: 05/17/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Jiang, Tongbi, Chye, Lim Thiam, Fee, Setho Sing
• Granted Patent: US 7,977,157 B2
• Time in Patent Office: Days
• US Class Current: 438/121
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/81193 wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81205 Ultrasonic bonding
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/81894 Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01011 : Sodium [Na]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.

Claims

1. A method of assembling an integrated circuit package, comprising:

providing a semiconductor die comprising integrated circuitry, the die comprising electrically conductive bond pad regions and electrically conductive caps over an entirety of the bond pad regions;

providing an interposer having electrically conductive projections; and

bonding the electrically conductive projections to the electrically conductive caps utilizing vibrational energy having a frequency of at least about one kilohertz.

2. The method of claim 1 wherein the bonding comprises:

providing electrically conductive structures between the electrically conductive projections and the electrically conductive caps;

directly bonding the electrically conductive structures to the electrically conductive projections; and

directly bonding the electrically conductive structures to the electrically conductive caps.

3. The method of claim 2 wherein the electrically conductive structures comprise copper or gold.

4. The method of claim 1 wherein the bonding comprises:

providing gold-containing material between the electrically conductive projections and the electrically conductive caps;

directly bonding the gold-containing material to the electrically conductive projections; and

directly bonding the gold-containing material to the electrically conductive caps.

5. The method of claim 1 wherein the bonding comprises:

providing gold-containing balls between the electrically conductive projections and the electrically conductive caps;

directly bonding the gold-containing balls to the electrically conductive projections; and

directly bonding the gold-containing balls to the electrically conductive caps.

6. The method of claim 5 further comprising forming deformable material over the electrically conductive caps prior to the bonding of the electrically conductive projections to the electrically conductive caps, wherein the gold-containing balls are bonded to the electrically conductive caps prior to the bonding of the gold-containing balls to the electrically conductive projections, and wherein the electrically conductive projections are pressed through the deformable material to directly contact the balls prior to the bonding of the electrically conductive projections to the gold-containing balls.

7. The method of claim 6 wherein the deformable material comprises a non-conductive film.

8. The method of claim 6 wherein the deformable material comprises a non-conductive paste.

9. The method of claim 6 wherein the deformable material comprises an anisotropically conductive material;

wherein the deformable material entirely surrounds exposed surfaces of the gold-containing balls prior to the pressing of the conductive projections through the deformable material; and

wherein the pressing of the conductive projections into direct contact with the balls compresses regions of the deformable material adjacent the balls and thereby transforms the anisotropically conductive material within such regions from a non-electrically-conductive form into an electrically-conductive form.

11. The method of claim 6 wherein the deformable material comprises an organic solderability preservative.

12. The method of claim 1 wherein the electrically conductive bond pad regions comprise one or both of Al and Cu;

and wherein the electrically conductive caps include one or more of Ag, Au, Co, Cr, Cu, Ni, Pd, Pt, Ta, Ti, V and W.

13. The method of claim 1 wherein the electrically conductive bond pad regions comprise aluminum;

and wherein the electrically conductive caps include a second layer over a first layer;

the first layer comprising nickel and the second layer comprising gold.

10. (canceled)

14-23. -23. (canceled)

24. A method of forming an integrated circuit package, comprising:

forming adhesion layers over bond pad regions of a semiconductor die;

forming electrically conductive inner layers over the adhesion layers, the electrically conductive inner layers comprising one or more of B, Co, Cr, Ni, P, Pt, Ta, Ti, V and W;

forming electrically conductive outer layers over the inner layers;

directly contacting the electrically conductive outer layers with electrically conductive structures;

directly contacting the electrically conductive structures with electrically conductive surfaces of a piece separate from the die; and

utilizing vibrational energy with a frequency of at least about one kilohertz to bond the electrically conductive outer layers to the electrically conductive structures; and

utilizing vibrational energy with a frequency of at least about one kilohertz to bond the electrically conductive surfaces to the electrically conductive structures.

25. The method of claim 24 wherein the electrically conductive structures are balls.

26. The method of claim 25 wherein the balls comprise copper.

27. The method of claim 25 wherein the balls comprise gold.

28. The method of claim 24 wherein the electrically conductive outer layers comprise one or more of Ag, Au, Cu and Pd.

29. The method of claim 28 wherein the electrically conductive surfaces comprise one or more of Ag, Au, Cu and Pd.

30. The method of claim 28 wherein the adhesion layers are palladium-containing layers.

31. The method of claim 28 wherein the adhesion layers are zinc-containing layers.

32. The method of claim 31 wherein the forming of the zinc-containing layers comprises:

first zincate activation of surfaces of the bond pad regions to form a first zinc-containing material;

removal of the first zinc-containing material; and

second zincate activation of surfaces of the bond pad regions to form a second zinc-containing material.

33. The method of claim 31 wherein the bond pad regions comprise aluminum or copper, and wherein the zinc-containing layers are formed directly against the aluminum or copper of the bond pad regions.

34. A method of forming an integrated circuit package, comprising:

forming zinc-containing layers over bond pad regions of a semiconductor die;

forming nickel-containing layers over the zinc-containing layers;

forming gold-containing layers over the nickel-containing layers;

directly contacting the gold-containing layers with gold-containing surfaces of one or more pieces separate from the die; and

utilizing vibrational energy with a frequency of at least about one kilohertz to bond the gold-containing layers to the gold-containing surfaces.

35. The method of claim 34 wherein the gold-containing surfaces are surfaces of gold-containing balls.

36. The method of claim 35 further comprising bonding the gold-containing balls to gold-containing projections of an interposer.

37. The method of claim 34 wherein the bond pad regions comprise aluminum or copper, and wherein the zinc-containing layers are formed directly against the aluminum or copper of the bond pad regions.

38. The method of claim 34 wherein the frequency of the vibrational energy is less than or equal to 240 kilohertz.

48. The method of claim 36 wherein the directly contacting of the gold-containing layers to the surfaces of the gold-containing balls bonds the gold-containing balls to the gold-containing layers, and further comprising:

after bonding the balls to the gold-containing layers, providing z-axis conductive material over the balls;

the z-axis conductive material having a substantially planar upper surface that extends across the balls and that extends across regions of the semiconductor die between the balls;

the z-axis conductive material entirely surrounding exposed surfaces of the balls;

the z-axis conductive material being in a non-conductive form as the z-axis conductive material is provided over and between the balls;

pressing the projections of the interposer through the z-axis conductive material until the projections directly contact the balls during the bonding of the projections to the balls; and

after the projections are pressed through the z-axis conductive material, the z-axis conductive material filling gaps adjacent curved regions of the balls;

the z-axis conductive material being compressed in said gaps so that the z-axis conductive material becomes electrically conductive within the gaps to impose conductivity across said gaps.

39-47. -47. (canceled)