METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES
First Claim
1. A method for selective oxidation of silicon on a substrate in the presence of other materials, comprising:
- placing the substrate in a vacuum processing chamber;
generating a plasma remotely from the substrate, such that no part of the plasma touches the substrate;
injecting into the plasma H2 and O2 gases;
providing flow path for radicals from the plasma to reach the substrate; and
,preventing ions from reaching the substrate.
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Accused Products
Abstract
Plasma assisted low temperature radical oxidation is described. The oxidation is selective to metals or metal oxides that may be present in addition to the silicon being oxidized. Selectivity is achieved by proper selection of process parameters, mainly the ratio of H2 to O2 gas. The process window may be enlarged by injecting H2O steam into the plasma, thereby enabling oxidation of silicon in the presence of TiN and W, at relatively low temperatures. Selective oxidation is improved by the use of an apparatus having remote plasma and flowing radicals onto the substrate, but blocking ions from reaching the substrate.
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Citations
18 Claims
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1. A method for selective oxidation of silicon on a substrate in the presence of other materials, comprising:
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placing the substrate in a vacuum processing chamber; generating a plasma remotely from the substrate, such that no part of the plasma touches the substrate; injecting into the plasma H2 and O2 gases; providing flow path for radicals from the plasma to reach the substrate; and
,preventing ions from reaching the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An apparatus for selective oxidation of silicon on a substrate in the presence of other materials, comprising:
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a vacuum enclosure; a substrate pedestal situated within the enclosure; a plasma generation region; a conduit enabling radical flow from the plasma generation region to the vacuum enclosure; a gas source coupled to the plasma generation region; and a steam source coupled to the plasma generation region. - View Dependent Claims (10, 11, 12)
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13. An apparatus for selective oxidation of silicon on a substrate in the presence of other materials, comprising:
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a vacuum enclosure; a substrate pedestal situated within the enclosure; a plasma generation region, the plasma generation region comprising an RF transparent wall, an electrostatic shield provided about the wall, and an inductive coil provided about the shield; a conduit enabling radical flow from the plasma generation region to the vacuum enclosure; a gas source coupled to the plasma generation region. - View Dependent Claims (14, 15)
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16. A method for selective oxidation of silicon on a substrate in the presence of tungsten, comprising:
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placing the substrate in a vacuum processing chamber; generating a plasma remotely from the substrate, such that charged particles from the plasma are substantially prevented from reaching the substrate; injecting into the plasma H2 and at least one of O2 gas or H2O steam; providing flow path for radicals from the plasma to reach the substrate. - View Dependent Claims (17, 18)
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Specification