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METHOD AND APPARATUS FOR GROWING THIN OXIDE FILMS ON SILICON WHILE MINIMIZING IMPACT ON EXISTING STRUCTURES

  • US 20100151694A1
  • Filed: 12/12/2008
  • Published: 06/17/2010
  • Est. Priority Date: 12/12/2008
  • Status: Active Grant
First Claim
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1. A method for selective oxidation of silicon on a substrate in the presence of other materials, comprising:

  • placing the substrate in a vacuum processing chamber;

    generating a plasma remotely from the substrate, such that no part of the plasma touches the substrate;

    injecting into the plasma H2 and O2 gases;

    providing flow path for radicals from the plasma to reach the substrate; and

    ,preventing ions from reaching the substrate.

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