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Ruggedized memory device

  • US 20100153660A1
  • Filed: 12/17/2008
  • Published: 06/17/2010
  • Est. Priority Date: 12/17/2008
  • Status: Active Grant
First Claim
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1. A method of processing an atomic transaction in a non-volatile storage device, comprising:

  • receiving a set of commands at the non-volatile storage device, wherein the set of commands comprises a plurality of write commands, and each write command is associated with a corresponding logical block address and comprises data;

    processing each of the plurality of write commands, comprising;

    (i) writing the data from each write command to a non-volatile memory within the non-volatile storage device; and

    (ii) conditionally associating the data received from each write command with its corresponding logical block address;

    receiving an end of set command indicating an end of the set of commands; and

    in response to receiving the end of set command, and without moving the data within the non-volatile storage device, for each logical block address that is associated with a write command in the set of commands, unconditionally associating with the logical block address the data of the last command of the set of commands conditionally associated with the logical block address.

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