VOLTAGE SWITCHABLE DIELECTRIC MATERIAL HAVING HIGH ASPECT RATIO PARTICLES

• US 20100155670A1
• Filed: 03/03/2010
• Published: 06/24/2010
• Est. Priority Date: 07/29/2006
• Status: Abandoned Application

• Current Assignee: Littelfuse Incorporated
• Original Assignee: Littelfuse Incorporated
• Inventors: Kosowsky, Lex, Fleming, Robert
• Application Number:
  US12/717,102
• Publication Number:
  US 20100155670A1
• Time in Patent Office: Days
• US Class Current: 252/500
• CPC Class Codes: H01C 17/06513 characterised by the resistive component
• CPC Class Codes: H01C 17/0652 containing carbon or carbides
• CPC Class Codes: H01C 17/06526 composed of metals
• CPC Class Codes: H01C 17/06586 composed of organic material
• CPC Class Codes: H01C 7/10 voltage responsive, i.e. varistors
• CPC Class Codes: H05K 1/0254 High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection electrostatic discharge protection for electric apparatus in general H05K9/0067, H05K9/0079; Arrangements for regulating voltages or for using plural voltages
• CPC Class Codes: H05K 1/0373 containing additives, e.g. fillers H05K1/036 takes precedence
• CPC Class Codes: H05K 1/167 incorporating printed resistors
• CPC Class Codes: H05K 2201/0209 Inorganic, non-metallic particles
• CPC Class Codes: H05K 2201/0738 Use of voltage responsive materials, e.g. voltage switchable dielectric or varistor materials

Abstract

A composition of voltage switchable dielectric (VSD) material that utilizes semi-conductive or conductive materials that have a relatively high aspect ratio for purpose of enhancing mechanical and electrical characteristics of the VSD material.

Claims

1. A composition comprising:

a mixture comprising a resin and semiconducting organic material dispersed in the resin;

conductive material dispersed in the mixture; and

wherein the conductive material and the mixture combine to provide the composition with a characteristic of being (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of the voltage exceeding the characteristic voltage level.

2. The composition of claim 1, wherein the semiconducting organic material is solvent soluble and dispersed to covalently bond to molecules of the resin.

3. The composition of claim 1, wherein the semiconducting organic material has an off-state resistance that is greater than 1 Megaohm.

4. The composition of claim 1, further comprising a concentration of semiconducting oxide particle fillers.

5. The composition of claim 4, wherein the concentration of semiconducting oxide particle fillers include antimony tin oxide (ATO) particles.

6. The composition of claim 4, wherein the concentration of semiconducting oxide particle fillers include zinc oxide.

7. The composition of claim 1, wherein the semiconducting organic material includes 2-Amino-4,5-imidazole dicarbonitrile.

8. The composition of claim 1, wherein the semiconducting organic material includes Tetracyanoquinodimethane.

9. The composition of claim 1, wherein the conductive material comprises a concentration of nickel particles.

10. The composition of claim 1, wherein the semiconducting organic material includes Tetracyanoquinodimethane or 2-Amino-4,5-imidazole dicarbonitrile, and wherein the conductive material comprises a concentration of nickel particles.

11. The composition of claim 10, further comprising a concentration of semiconducting oxide particle fillers.

12. The composition of claim 1, wherein the resin is comprised of a mixture of polymers.