Quad memory cell and method of making same
First Claim
Patent Images
1. A non-volatile memory device comprising:
- a first electrode;
a diode steering element;
at least three resistivity switching storage elements; and
a second electrode;
wherein;
the diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements; and
the second electrode electrically contacts only one of the at least three resistivity switching storage elements.
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Abstract
A non-volatile memory device includes a first electrode, a diode steering element, at least three resistivity switching storage elements, and a second electrode. The diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements. The second electrode electrically contacts only one of the at least three resistivity switching storage elements.
33 Citations
33 Claims
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1. A non-volatile memory device comprising:
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a first electrode; a diode steering element; at least three resistivity switching storage elements; and a second electrode; wherein; the diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements; and the second electrode electrically contacts only one of the at least three resistivity switching storage elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A non-volatile memory device comprising:
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a first electrode; a first diode steering element; at least three resistivity switching storage elements; a second diode steering element; and a second electrode; wherein; the first diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements, and the second diode steering element electrically contacts the second electrode and only one of the at least three resistivity switching storage elements. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A non-volatile memory device comprising:
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a first diode steering element; a first bit line electrically contacting the first diode steering element; at least three resistivity switching storage elements; a first word line, wherein the first diode steering element electrically contacts the at least three resistivity switching storage elements, and the first word line electrically contacts only one of the at least three resistivity switching storage elements; a second diode steering element which is located adjacent to the first diode steering element; a second bit line electrically contacting the second diode steering element; and at least three additional resistivity switching storage elements, wherein the first diode steering element electrically contacts the at least three additional resistivity switching storage elements, and the first word line electrically contacts only one of the at least three additional resistivity switching storage elements; and a by-pass bit line located between the first and the second bit lines, wherein the by-pass bit line does not electrically contact the first diode steering element or the second diode steering element. - View Dependent Claims (21, 22, 23, 24, 25)
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26. A memory array comprising:
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a matrix of first diode steering cells arranged in a plurality of rows and a plurality of columns on a first layer of the memory array; and a plurality of X lines, wherein the X lines are not substantially parallel to the rows; wherein each of the first diode steering cells contacts at least one of the plurality of X lines, and a number of X lines of the plurality of the X lines is greater than a number of columns of the plurality of columns. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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Specification