NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THE NONCRYSTALLINE OXIDE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING THIN-FILM TRANSISTOR, FIELD-EFFECT-TRANSISTOR, LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET
First Claim
1. An amorphous oxide semiconductor thin film having a carrier density of less than 10+18 cm−
- 3, and being insoluble in a phosphoric acid-based etching solution and soluble in an oxalic acid-based etching solution.
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Abstract
This invention provides an amorphous oxide semiconductor thin film, which is insoluble in a phosphoric acid-based etching solution and is soluble in an oxalic acid-based etching solution by optimizing the amounts of indium, tin, and zinc, a method of producing the amorphous oxide semiconductor thin film, etc. An image display device (1) comprises a glass substrate (10), a liquid crystal (40) as a light control element, a bottom gate-type thin film transistor (1) for driving the liquid crystal (40), a pixel electrode (30), and an opposing electrode (50). The amorphous oxide semiconductor thin film (2) in the bottom gate-type thin film transistor (1) has a carrier density of less than 10+18 cm−3, is insoluble in a phosphoric acid-based etching liquid, and is soluble in an oxalic acid-based etching liquid.
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Citations
18 Claims
-
1. An amorphous oxide semiconductor thin film having a carrier density of less than 10+18 cm−
- 3, and being insoluble in a phosphoric acid-based etching solution and soluble in an oxalic acid-based etching solution.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A sputtering target comprising indium, tin, zinc, a IIIB group element other than indium (at least one selected from B, Al, Ga and Tl) and oxygen, wherein atomic ratios of the number of indium atoms ([In]), the number of tin atoms ([Sn]), the number of zinc atoms ([Zn]) and the number of atoms of the IIIB group element ([IIIB]) are:
-
0.1<
[In]/([In]+[Sn]+[Zn])<
0.5
0.1<
[Sn]/([In]+[Sn]+[Zn])<
0.2
0.3<
[Zn]/([In]+[Sn]+[Zn])<
0.8
0.0001<
[IIIB]/([In]+[Sn]+[Zn]+[IIIB])<
0.33, andwherein a bulk resistance is 10−
3 to 103 mΩ
, and a sintered density is 80% or more.
-
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18. A sputtering target comprising indium, tin, zinc, a lanthanoid series element (at least one selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) and oxygen, wherein atomic ratios of the number of indium atoms ([In]), the number of tin atoms ([Sn]), the number of zinc atoms ([Zn]) and the number of lanthanoid series atoms ([Ln]) are:
-
0.1<
[In]/([In]+[Sn]+[Zn])<
0.5
0.1<
[Sn]/([In]+[Sn]+[Zn])<
0.2
0.3<
[Zn]/([In]+[Sn]+[Zn])<
0.8
0.0001<
[Ln]/([In]+[Sn]+[Zn]+[Ln])<
0.1, andwherein a bulk resistance is 10−
3 to 103 mΩ
, and a sintered density is 80% or more.
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Specification