Semiconductor Device and Manufacturing Method Thereof

• US 20100155732A1
• Filed: 12/14/2009
• Published: 06/24/2010
• Est. Priority Date: 03/29/1999
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kusuyama, Yoshihiro, Suzawa, Hideomi
• Granted Patent: US 8,093,591 B2
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

It is an object of the present invention to provide a manufacturing method of semiconductor device whereby the number of processes is decreased due to simultaneously forming a contact hole in a lamination film of different material and film thickness (inorganic insulating film and organic resin film) by conducting etching once. By setting the selective ratio of dry etching (etching rate of organic resin film 503/etching rate of inorganic insulating film 502 containing nitrogen) from 1.6 to 2.9, preferably 1.9, the shape and the size of the contact holes to be formed even in a film of different material and film thickness can be nearly the same in both of the contact holes.

Claims

1-13. -13. (canceled)

14. A semiconductor device comprising:

a first conductive film formed over an insulating substrate;

an inorganic insulating film covering said first conductive film;

an organic film including Si covering said inorganic insulating film;

a contact hole that goes through said inorganic insulating film and said organic film including Si; and

an edge portion of said inorganic insulating film that comes in contact with a bottom surface of said contact hole is taper like having an angle range of 30 degree to 80 degree from a horizontal surface;

a second conductive film formed over said organic film including Si and connected to said first conductive film at a bottom surface of said contact hole.

15. The semiconductor device according to claim 14, wherein said contact hole is formed by performing one etching.

16. The semiconductor device according to claim 14, further comprising a thin film transistor electrically connected to said first conductive film.

17. The semiconductor device according to claim 14, wherein said second conductive film is a pixel electrode.

18. The semiconductor device according to claim 14, wherein said inorganic insulating film is a silicon nitride film or a silicon oxide nitride film.

19. The semiconductor device according to claim 14, wherein said semiconductor device includes an active matrix liquid crystal display device, an active matrix EL display device or an active matrix EC display device.

32. An electronic device having the semiconductor device according to claim 14.

36. The semiconductor device according to claim 32, wherein the semiconductor device is incorporated into one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a navigation system for automobiles, a personal computer, and a mobile information terminal.

20. A semiconductor device comprising:

a substrate;

a source region and a drain region which are provided over said substrate with a channel region provided over said substrate between said source region and said drain region;

a gate electrode provided over said substrate and provided adjacent to said channel region with a gate insulating film between said gate electrode and said channel region;

a wiring provided over and connected with one of said source region and said drain region;

an inorganic insulating film provided over said wiring;

an organic film including Si provided over said inorganic insulating film;

a contact hole provided through said inorganic insulating film and said organic film including Si; and

an edge portion of said inorganic insulating film that comes in contact with a bottom surface of said contact hole is taper like having an angle range of 30 degree to 80 degree from a horizontal surface;

a pixel electrode provided over said organic film including Si and connected with said wiring through said contact hole.

21. The semiconductor device according to claim 20, wherein said inorganic insulating film is a silicon nitride film or a silicon oxide nitride film.

22. The semiconductor device according to claim 20, wherein said semiconductor device includes an active matrix liquid crystal display device, an active matrix EL display device or an active matrix EC display device.

33. An electronic device having the semiconductor device according to claim 20.

37. The semiconductor device according to claim 33, wherein the semiconductor device is incorporated into one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a navigation system for automobiles, a personal computer, and a mobile information terminal.

23. A semiconductor device comprising:

a first conductive film formed over an insulating substrate;

an inorganic insulating film covering said first conductive film;

an organic film including Si covering said inorganic insulating film;

a contact hole that goes through said inorganic insulating film and said organic film including Si; and

an edge portion of said organic film including Si that comes in contact with said inorganic insulating film has an angle range of 50 degree to 90 degree from a horizontal surface;

a second conductive film formed over said organic film including Si and connected to said first conductive film at a bottom surface of said contact hole.

24. The semiconductor device according to claim 23, wherein said contact hole is formed by performing one etching.

25. The semiconductor device according to claim 23, further comprising a thin film transistor electrically connected to said first conductive film.

26. The semiconductor device according to claim 23, wherein said second conductive film is a pixel electrode.

27. The semiconductor device according to claim 23, wherein said inorganic insulating film is a silicon nitride film or a silicon oxide nitride film.

28. The semiconductor device according to claim 23, wherein said semiconductor device includes an active matrix liquid crystal display device, an active matrix EL display device or an active matrix EC display device.

34. An electronic device having the semiconductor device according to claim 23.

38. The semiconductor device according to claim 34, wherein the semiconductor device is incorporated into one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a navigation system for automobiles, a personal computer, and a mobile information terminal.

29. A semiconductor device comprising:

a substrate;

a source region and a drain region which are provided over said substrate with a channel region provided over said substrate between said source region and said drain region;

a gate electrode provided over said substrate and provided adjacent to said channel region with a gate insulating film between said gate electrode and said channel region;

a wiring provided over and connected with one of said source region and said drain region;

an inorganic insulating film provided over said wiring;

an organic film including Si provided over said inorganic insulating film;

a contact hole provided through said inorganic insulating film and said organic film including Si; and

an edge portion of said organic film including Si that comes in contact with said inorganic insulating film has an angle range of 50 degree to 90 degree from a horizontal surface;

a pixel electrode provided over said organic film including Si and connected with said wiring through said contact hole.

30. The semiconductor device according to claim 29, wherein the inorganic insulating film is a silicon nitride film or a silicon oxide nitride film.

31. The semiconductor device according to claim 29, wherein the semiconductor device includes an active matrix liquid crystal display device, an active matrix EL display device or an active matrix EC display device.

35. An electronic device having the semiconductor device according to claim 29.

39. The semiconductor device according to claim 35, wherein the semiconductor device is incorporated into one selected from the group consisting of a video camera, a digital camera, a projector, a goggle-type display, a navigation system for automobiles, a personal computer, and a mobile information terminal.