METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION
First Claim
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1. A semiconductor film, comprising:
- a semipolar nitride semiconductor film deposited on a nitride nucleation or buffer layer, wherein the nitride nucleation or buffer layer includes at least some indium, and a surface area greater than 10 microns wide of the semipolar nitride semiconductor film is substantially parallel to a substrate surface upon which the nitride nucleation or buffer layer is grown.
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Abstract
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
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12 Claims
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1. A semiconductor film, comprising:
a semipolar nitride semiconductor film deposited on a nitride nucleation or buffer layer, wherein the nitride nucleation or buffer layer includes at least some indium, and a surface area greater than 10 microns wide of the semipolar nitride semiconductor film is substantially parallel to a substrate surface upon which the nitride nucleation or buffer layer is grown. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a semiconductor film, comprising:
depositing a semipolar nitride semiconductor film on a nitride nucleation or buffer layer, wherein the nitride nucleation or buffer layer includes at least some indium, and a surface area greater than 10 microns wide of the semipolar nitride semiconductor film is substantially parallel to a substrate surface upon which the nitride nucleation or buffer layer is grown. - View Dependent Claims (8, 9, 10, 11, 12)
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