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STACKED NON-VOLATILE MEMORY DEVICE AND METHODS FOR FABRICATING THE SAME

  • US 20100155821A1
  • Filed: 03/03/2010
  • Published: 06/24/2010
  • Est. Priority Date: 12/09/2005
  • Status: Active Grant
First Claim
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1. A memory device, comprising:

  • a first word line;

    a first charge storage layer over the first word line;

    a bit line over the first charge storage layer;

    a second charge storage layer over the bit line; and

    a second word line over the second charge storage layer, wherein a channel region is located in a region of the bit line between the first and second word lines.

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