SILICON INTERPOSER TESTING FOR THREE DIMENSIONAL CHIP STACK
First Claim
1. A method of manufacturing a semiconductor interposer, comprising:
- forming an interposer subassembly of semiconductor material including first, second and third interconnects extending from a first surface of the interposer subassembly to a second surface of the interposer subassembly, the first and second surfaces being opposed major surfaces;
forming a non-conductive layer on the first surface of the interposer subassembly;
selectively removing portions of the non-conductive layer at the first and second interconnects to form open regions at the first and second interconnects, thus forming remaining non-conductive layer portions other than at the first and second interconnects; and
applying a conductive adhesive layer adjacent the first surface of the interposer subassembly covering the open regions and remaining non-conductive layer portions.
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Accused Products
Abstract
A testing method for a silicon interposer employs a test probe and an electrically conductive glass handler. The silicon interposer includes multiple interconnects that extend between the opposed major surfaces of the interposer, namely from a test side of the interposer to a conductive glass handler side of the interposer. On the glass handler side, the interposer includes a layer of patterned insulative resist with open regions at some interconnects on the glass handler side and remaining resist regions at other interconnects on the glass handler side. The interposer may include a conductive adhesive layer that couples together interconnects at the open regions on the glass handler side. In this manner, a probe may send a test signal from a first interconnect at one location on the test side of the interposer, through the first interconnect, through the conductive adhesive, through a second interconnect to another probe on the test side of the interposer. The method thus provides same-sided probe testing of the interposer. The method also provides for loading or power application to the conductive glass handler and testing of circuits and interconnects on the test side of the silicon interposer.
48 Citations
22 Claims
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1. A method of manufacturing a semiconductor interposer, comprising:
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forming an interposer subassembly of semiconductor material including first, second and third interconnects extending from a first surface of the interposer subassembly to a second surface of the interposer subassembly, the first and second surfaces being opposed major surfaces; forming a non-conductive layer on the first surface of the interposer subassembly; selectively removing portions of the non-conductive layer at the first and second interconnects to form open regions at the first and second interconnects, thus forming remaining non-conductive layer portions other than at the first and second interconnects; and applying a conductive adhesive layer adjacent the first surface of the interposer subassembly covering the open regions and remaining non-conductive layer portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor interposer, comprising:
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an interposer subassembly of semiconductor material including first, second and third interconnects extending from a first surface of the interposer subassembly to a second surface of the interposer subassembly, the first and second surfaces being opposed major surfaces; a non-conductive layer on the first surface of the interposer, the non-conductive layer including open regions at the first and second interconnects where the non-conductive layer is removed, thus forming remaining non-conductive layer portions other than at the first and second interconnects; and a conductive adhesive layer adjacent the first surface of the interposer subassembly covering the open regions and remaining non-conductive layer portions. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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Specification