Quad memory cell and method of making same
First Claim
Patent Images
1. A method of making a semiconductor device, comprising:
- forming a conductor layer;
forming a resistivity switching storage element layer over the conductor layer;
forming at least one first layer of a diode steering element over the resistivity switching storage element layer;
patterning the conductor layer, the resistivity switching storage element layer and the at least one first layer using a first mask to form a plurality of patterns, each pattern comprising a portion of the conductor layer, a portion of the resistivity switching storage element layer and a portion of the at least one first layer;
filling spaces between adjacent patterns with a gap fill insulating material;
forming at least one second layer of the diode steering element over the patterns and over the gap fill insulating material such that the at least one second layer contacts portions of the at least one first layer in the plurality patterns; and
patterning the at least one second layer, the portions of the at least one first layer, and portions of the resistivity switching storage element layer using a second mask to form a plurality of diodes each comprising one portion of the second layer, at least three portions of the first layer separated from each other by the gap fill insulating layer and at least three resistivity switching storage elements separated from each other by the gap fill insulating layer,wherein each of the at least three portions of the first layer contacts one of the at least three resistivity switching storage elements.
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Abstract
A non-volatile memory device includes a first electrode, a diode steering element, at least three resistivity switching storage elements, and a second electrode. The diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements. The second electrode electrically contacts only one of the at least three resistivity switching storage elements.
35 Citations
33 Claims
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1. A method of making a semiconductor device, comprising:
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forming a conductor layer; forming a resistivity switching storage element layer over the conductor layer; forming at least one first layer of a diode steering element over the resistivity switching storage element layer; patterning the conductor layer, the resistivity switching storage element layer and the at least one first layer using a first mask to form a plurality of patterns, each pattern comprising a portion of the conductor layer, a portion of the resistivity switching storage element layer and a portion of the at least one first layer; filling spaces between adjacent patterns with a gap fill insulating material; forming at least one second layer of the diode steering element over the patterns and over the gap fill insulating material such that the at least one second layer contacts portions of the at least one first layer in the plurality patterns; and patterning the at least one second layer, the portions of the at least one first layer, and portions of the resistivity switching storage element layer using a second mask to form a plurality of diodes each comprising one portion of the second layer, at least three portions of the first layer separated from each other by the gap fill insulating layer and at least three resistivity switching storage elements separated from each other by the gap fill insulating layer, wherein each of the at least three portions of the first layer contacts one of the at least three resistivity switching storage elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of making a semiconductor device, comprising:
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forming at least one first layer of a diode; forming at least one second layer of a diode over the first layer; patterning the at least one first layer and the at least one second layer into a plurality of diodes using a first mask; filling spaces between the plurality of diodes with a gap fill insulating material; forming a resistivity switching storage element layer over the plurality of diodes and over the gap fill insulating material; forming a conductor layer over the resistivity switching storage element layer; and patterning the conductor layer, the resistivity switching storage element layer and the at least one second layer using a second mask such that each of the plurality of diodes comprises one portion of the first layer, at least three portions of the second layer which are separated from each other, and at least three resistivity switching storage elements which are separated from each other; wherein each of the at least three portions of the second layer contacts one of the at least three resistivity switching storage elements. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method of making a semiconductor device, comprising:
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forming a first layer of a diode in electrical contact with a first electrode; forming an insulating layer over the first layer; forming a tapered opening in the insulating layer to expose the first layer; and forming at least one second layer of the diode in the tapered opening to form the diode such that the at least one second layer has a tapered shape. - View Dependent Claims (22, 23, 24, 25, 26, 27)
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28. A method of reading a nonvolatile memory device, comprising:
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sensing a selected cell a first time, wherein a first reading is taken; forcing the selected cell to a first state; sensing the selected cell a second time, wherein a second reading is taken; and comparing the first reading and the second reading, wherein;
the cell is selected from;a) a diode and a resistivity switching storage element;
orb) a diode, a resistivity switching storage element, and a second diode; and wherein the cell is part of an array of cells, and the state of the selected cell is determined based on comparing the first reading and the second reading. - View Dependent Claims (29, 30, 31, 32, 33)
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Specification