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MAGNETORESISTIVE MEMORY CELL USING FLOATING BODY EFFECT, MEMORY DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE MEMORY DEVICE

  • US 20100157664A1
  • Filed: 07/22/2009
  • Published: 06/24/2010
  • Est. Priority Date: 12/23/2008
  • Status: Active Grant
First Claim
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1. A magnetoresistive memory cell, comprising:

  • a Magnetic Tunnel Junction (MTJ) device; and

    a select transistor,wherein the select transistor comprises;

    a first conduction-type semiconductor layer;

    a gate electrode formed by disposing a gate insulating layer on top of the semiconductor layer; and

    first and second diffusion regions formed in the semiconductor layer to be spaced apart from each other and to have a second conduction type,wherein a part of the semiconductor layer between the first and second diffusion regions is formed as an electrically floating body region.

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