MAGNETORESISTIVE MEMORY CELL USING FLOATING BODY EFFECT, MEMORY DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE MEMORY DEVICE
First Claim
1. A magnetoresistive memory cell, comprising:
- a Magnetic Tunnel Junction (MTJ) device; and
a select transistor,wherein the select transistor comprises;
a first conduction-type semiconductor layer;
a gate electrode formed by disposing a gate insulating layer on top of the semiconductor layer; and
first and second diffusion regions formed in the semiconductor layer to be spaced apart from each other and to have a second conduction type,wherein a part of the semiconductor layer between the first and second diffusion regions is formed as an electrically floating body region.
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Abstract
A magnetoresistive memory cell includes an MTJ device and a select transistor. The select transistor includes a first conduction-type semiconductor layer, a gate electrode formed by disposing a gate insulating layer on top of the semiconductor layer, and first and second diffusion regions formed in the semiconductor layer to be spaced apart from each other and to have a second conduction type. A part of the semiconductor layer between the first and second diffusion regions is formed as an electrically floating body region. By using a high-performance select transistor with a floating body effect, high integration of a magnetoresistive memory device may be achieved.
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Citations
19 Claims
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1. A magnetoresistive memory cell, comprising:
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a Magnetic Tunnel Junction (MTJ) device; and a select transistor, wherein the select transistor comprises; a first conduction-type semiconductor layer; a gate electrode formed by disposing a gate insulating layer on top of the semiconductor layer; and first and second diffusion regions formed in the semiconductor layer to be spaced apart from each other and to have a second conduction type, wherein a part of the semiconductor layer between the first and second diffusion regions is formed as an electrically floating body region. - View Dependent Claims (2, 3, 4)
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5. A magnetoresistive memory device, comprising:
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a memory cell including a Magnetic Tunnel Junction (MTJ) device, and a select transistor including a first conduction-type semiconductor layer, a gate electrode formed by disposing a gate insulating layer on top of the semiconductor layer, first and second diffusion regions formed in the semiconductor layer to be spaced apart from each other and to have a second conduction type, wherein a part of the semiconductor layer between the first and second diffusion regions is formed as an electrically floating body region; a word line electrically connected to the gate electrode; a bit line electrically connected to one of the first and second diffusion regions through the MTJ device; and a source line electrically connected to a remaining one of the first and second diffusion regions. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A magnetoresistive memory device comprising:
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a memory cell including a Magnetic Tunnel Junction (MTJ) device; and a select transistor including a Metal Oxide Semiconductor (MOS) transistor and a Bipolar Junction Transistor (BJT) that are connected in parallel, wherein the MOS transistor and the BJT are connected in common to the MTJ device, are configured to supply current to the MTJ device in response to a gate voltage applied to the gate electrode of the select transistor, and share a common floating body region between a source region and a drain region of the select transistor. - View Dependent Claims (18, 19)
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Specification