METHOD FOR MANUFACTURING TRANSISTOR

• US 20100159639A1
• Filed: 12/09/2009
• Published: 06/24/2010
• Est. Priority Date: 12/19/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SAKATA, Junichiro
• Granted Patent: US 8,183,099 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region in the oxide semiconductor layer by conducting oxidation treatment, so that regions with different conductivities are formed in the oxide semiconductor layer. After that, a channel formation region, a source region, and a drain region can be formed with the use of the regions with different conductivities formed in the oxide semiconductor layer.

Claims

1. A method for manufacturing a transistor, comprising the steps of:

forming an oxide semiconductor layer including at least indium, zinc, gallium, and hydrogen;

forming a hydrogen barrier layer selectively over the oxide semiconductor layer so that at least part of the oxide semiconductor layer is exposed;

desorbing hydrogen selectively from the oxide semiconductor layer by conducting oxidation treatment so that a first region and a second region which includes less hydrogen than the first region are formed in the oxide semiconductor layer; and

forming a channel formation region using the second region and forming a source region and a drain region using the first region.

8. The method for manufacturing a transistor according to any one of claims 1 to 6, wherein the hydrogen barrier layer is a single-layer film selected from a silicon nitride film, a silicon nitride oxide film, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, an aluminum nitride film, an aluminum oxynitride film, a titanium oxide film, a tantalum oxide film, a titanium nitride film, and a tantalum nitride film, or a stacked-layer film including two or more layers of them.

9. The method for manufacturing a transistor according to any one of claims 1 to 6, wherein as the oxidation treatment, heat treatment is conducted in an oxygen atmosphere.

10. The method for manufacturing a transistor according to any one of claims 1 to 6, wherein as the oxidation treatment, heat treatment is conducted after a hydrogen adsorption layer is formed so as to be in contact with the exposed oxide semiconductor layer.

11. The method for manufacturing a transistor according to claim 10, wherein the hydrogen adsorption layer is a single-layer film selected from an amorphous silicon film, a polycrystalline silicon film, and a tungsten oxide film, or a stacked-layer film including two or more layers of them.

12. The method for manufacturing a transistor according to any one of claims 1 to 6, wherein the oxide semiconductor layer is formed using a target including indium, gallium, and zinc by a sputtering method while a hydrogen gas is introduced into an atmosphere into which either or both of an oxygen gas and an argon gas are introduced.

2. A method for manufacturing a transistor, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating layer over the gate electrode;

forming a source electrode layer and a drain electrode layer over the gate insulating layer;

forming an oxide semiconductor layer including at least indium, zinc, gallium, and hydrogen over the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer includes a first region located over the source electrode layer, a second region located over the drain electrode layer, and a third region located over the gate electrode and between the source electrode layer and the drain electrode layer;

forming a hydrogen bather layer over the oxide semiconductor layer;

etching the hydrogen barrier layer so that parts of the hydrogen barrier layer, which are located over the first region and the second region, are left and a surface of the third region is exposed; and

conducting oxidation treatment to selectively desorb hydrogen from the oxide semiconductor layer so that in the oxide semiconductor layer, the third region includes less hydrogen than the first region and the second region.

7. The method for manufacturing a transistor according to any one of claims 2 to 6, wherein the hydrogen barrier layer is formed so as to cover an end portion of the oxide semiconductor layer.

3. A method for manufacturing a transistor, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating layer over the gate electrode;

forming a source electrode layer and a drain electrode layer over the gate insulating layer;

forming an oxide semiconductor layer including at least indium, zinc, gallium, and hydrogen over the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer includes a first region located over the source electrode layer, a second region located over the drain electrode layer, and a third region located over the gate electrode and between the source electrode layer and the drain electrode layer;

forming a hydrogen barrier layer over the oxide semiconductor layer;

etching the hydrogen barrier layer so that parts of the hydrogen barrier layer, which are located over the first region, the second region and part of the third region, are left and a surface of the other part of the third region is exposed; and

conducting oxidation treatment to selectively desorb hydrogen from the oxide semiconductor layer so that in the oxide semiconductor layer, a region whose surface is exposed includes less hydrogen than a region located under the hydrogen barrier layer.

4. A method for manufacturing a transistor, comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating layer over the gate electrode;

forming an oxide semiconductor layer including at least indium, zinc, gallium, and hydrogen over the gate insulating layer;

forming a hydrogen barrier layer over the oxide semiconductor layer;

etching the hydrogen barrier layer so that at least a surface of part of the oxide semiconductor layer, which is located over the gate electrode, is exposed; and

conducting oxidation treatment to selectively desorb hydrogen from the oxide semiconductor layer so that in the oxide semiconductor layer, a region whose surface is exposed includes less hydrogen than a region located under the hydrogen barrier layer.

5. A method for manufacturing a transistor, comprising the steps of:

forming a source electrode layer and a drain electrode layer over a substrate;

forming an oxide semiconductor layer including at least indium, zinc, gallium, and hydrogen over the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer includes a first region located over the source electrode layer, a second region located over the drain electrode layer, and a third region located between the source electrode layer and the drain electrode layer;

forming a hydrogen bather layer over the oxide semiconductor layer;

etching the hydrogen barrier layer so that parts of the hydrogen barrier layer, which are located over the first region and the second region, are left and a surface of the third region is exposed;

conducting oxidation treatment to selectively desorb hydrogen from the oxide semiconductor layer so that in the oxide semiconductor layer, the third region includes less hydrogen than the first region and the second region;

forming a gate insulating layer over the oxide semiconductor layer; and

forming a gate electrode in a region located between the source electrode layer and the drain electrode layer and over the gate insulating layer.

6. A method for manufacturing a transistor, comprising the steps of:

forming a source electrode layer and a drain electrode layer over a substrate;

forming an oxide semiconductor layer including at least indium, zinc, gallium, and hydrogen over the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer includes a first region located over the source electrode layer, a second region located over the drain electrode layer, and a third region located between the source electrode layer and the drain electrode layer;

forming a hydrogen bather layer over the oxide semiconductor layer;

etching the hydrogen barrier layer so that parts of the hydrogen barrier layer, which are located over the first region, the second region and part of the third region, are left and a surface of the other part of the third region is exposed;

conducting oxidation treatment to selectively desorb hydrogen from the oxide semiconductor layer so that in the oxide semiconductor layer, a region whose surface is exposed includes less hydrogen than a region located under the hydrogen barrier layer;

forming a gate insulating layer over the oxide semiconductor layer; and

forming a gate electrode in a region located between the source electrode layer and the drain electrode layer and over the gate insulating layer.