CAPACITIVE STRAIN SENSOR

• US 20100162824A1
• Filed: 10/26/2009
• Published: 07/01/2010
• Est. Priority Date: 10/27/2008
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: JAMSHIDI, Babak, Pisano, Albert P.
• Granted Patent: US 8,342,031 B2
• Time in Patent Office: Days
• US Class Current: 73/780
• CPC Class Codes: G01B 7/22 using change in capacitance
• CPC Class Codes: Y10T 29/49002 Electrical device making

Abstract

Provided are capacitive strain sensors. In certain embodiments, the capacitive strain sensor can continuously and accurately measure strain in corrosive ambient conditions and may operate up to 370° C. or more in air. The sensor includes a differential capacitor that includes a bending beam structure. In some instances, the sensor is configured to increase the effect of strain in a substrate along a sensing axis while attenuating the effect of cross-axis strain. Also provided are methods of making the capacitive strain sensors, e.g., using Micro-Electro-Mechanical System (MEMS) fabrication techniques, and methods of using the capacitive strain sensors.

Claims

1. A capacitive strain sensor comprising a differential capacitor comprising:

a first strain sensing element;

a second strain sensing element; and

a bending beam, wherein the bending beam is positioned between the first strain sensing element and the second strain sensing element, and wherein the sensor is configured to enhance the effect of strain in a substrate along a sensing axis and attenuate the effect of strain in the substrate along a cross-axis transverse to the sensing axis.

2. The strain sensor according to claim 1, further comprising a first strain transfer element and a second strain transfer element, wherein the bending beam is operatively coupled to the first strain transfer element and the second strain transfer element such that strain in the substrate deforms the bending beam causing a detectable change in capacitance of the sensor.

3. The strain sensor according to claim 1, further comprising one or more strain transfer beams, wherein the one or more strain transfer beams operatively couple the bending beam to the first strain transfer element and the second strain transfer element.

4. The strain sensor according to claim 3, comprising four strain transfer beams, wherein the four strain transfer beams are attached to the bending beam at four points, wherein the four points define a first rigid region, a bending region, and a second rigid region along the bending beam.

5. The strain sensor according to claim 4, wherein the strain transfer beams have a thickness of 5 μ

m or less.

6. The strain sensor according to claim 4, wherein the first rigid region and the second rigid region have thicknesses greater than the thickness of the bending region.

7. The strain sensor according to claim 6, wherein the first rigid region and the second rigid region have thicknesses ranging from 10 μ

m to 20 μ

m.

8. The strain sensor according to claim 6, wherein the bending region has a thickness of 5 μ

m or less.

9. The strain sensor according to claim 2, wherein the strain sensor is configured to detect strain in the substrate along the sensing axis.

10. The strain sensor according to claim 9, wherein the first strain transfer element, the second strain transfer element, the first strain sensing element, and the second strain sensing element are aligned along the sensing axis.

11. The strain sensor according to claim 9, wherein the strain sensor attenuates 90% or more of the effect of strain in the substrate along the cross axis.

12. The strain sensor according to claim 9, wherein the strain sensor attenuates 99% or more of the effect of strain in the substrate along the cross axis.

13. The strain sensor according to claim 1, further comprising a passivation layer.

14. The strain sensor according to claim 13, wherein the passivation layer has a thickness of 70 nm or less.

15. The strain sensor according to claim 14, wherein the passivation layer comprises silicon carbide.

16. The strain sensor according to claim 1, wherein the strain sensor has a sensitivity of 45 aF/μ

ε

or more.

17. A method for detecting strain in a substrate comprising:

detecting a change in capacitance of a capacitive strain sensor on a substrate, wherein the capacitive strain sensor comprises a differential capacitor comprising;

a first strain sensing element;

a second strain sensing element; and

a bending beam positioned between the first strain sensing element and the second strain sensing element such that strain in the substrate deforms the bending beam causing the change in capacitance; and

determining a value corresponding to the strain in the substrate based on the change in capacitance.

18. A method for detecting strain in a substrate comprising:

attaching a capacitive strain sensor to a substrate, wherein the capacitive strain sensor comprises a differential capacitor comprising;

a first strain sensing element;

a second strain sensing element; and

a bending beam positioned between the first strain sensing element and the second strain sensing element, such that strain in the substrate deforms the bending beam;

detecting a change in capacitance of the differential capacitor caused by deformation of the bending beam; and

determining a value corresponding to the strain in the substrate based on the change in capacitance.

19. A method of making a capacitive strain sensor comprising:

etching a silicon on insulator (SOI) wafer in the pattern of a capacitive strain sensor, wherein the capacitive strain sensor comprises a differential capacitor comprising;

a first strain sensing element;

a second strain sensing element; and

a bending beam positioned between the first strain sensing element and the second strain sensing element; and

releasing the capacitive strain sensor from the wafer.

20. The method according to claim 19, further comprising applying a passivation layer to the capacitive strain sensor.

21-35. -35. (canceled)