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PLASMA PROCESSING APPARATUS

  • US 20100163184A1
  • Filed: 02/12/2009
  • Published: 07/01/2010
  • Est. Priority Date: 12/26/2008
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus for processing a surface of a to-be-processed substrate, comprising:

  • a processing chamber;

    a first electrode provided in said processing chamber;

    a second electrode arranged in opposition to said first electrode;

    a main power source for supplying said first electrode or said second electrode with power for generating a plasma;

    a biasing power source for supplying said second electrode or said first electrode with biasing power;

    a gas supplying unit for supplying a processing gas into said processing chamber; and

    a control unit for controlling said main power source, said biasing power source and said gas supplying unit, whereinsaid control unit performs a control such that, during a time of transition from a stationary state of plasma to a plasma quenching, an output of said main power source is kept not larger than an output of said biasing power source, a plasma processing being carried out in said stationary state of plasma.

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