SENSOR COMPRISING AT LEAST A VERTICAL DOUBLE JUNCTION PHOTODIODE, BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS
First Claim
1. A sensor being integrated on a semiconductor substrate and comprising at least one vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate as well as at least one anti-reflection coating formed on said photodiode, said at least one anti-reflection coating comprising at least one first and one second different anti-reflection layer suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an optical signal being incident on said sensor.
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Accused Products
Abstract
An embodiment relates to a sensor being integrated on a semiconductor substrate and comprising at least a vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate, as well as at least an anti-reflection coating formed on said photodiode. Said at least one anti-reflection coating comprises at least one first and one second different anti-reflection layer being suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an incident optical signal on said sensor. An embodiment also relates to an integration process of such a sensor, as well as to an ambient light sensor made by means of such a sensor.
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Citations
41 Claims
- 1. A sensor being integrated on a semiconductor substrate and comprising at least one vertical double-junction photodiode, in turn comprising at least one first and one second p-n junction formed in said semiconductor substrate as well as at least one anti-reflection coating formed on said photodiode, said at least one anti-reflection coating comprising at least one first and one second different anti-reflection layer suitable to obtain a responsivity peak in correspondence with a predetermined wavelength of an optical signal being incident on said sensor.
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6. An integration process of a sensor in a multilayer structure comprising a semiconductor substrate and an alternate structure of intermetal dielectric layers, of the type comprising the steps of:
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forming in said semiconductor substrate at least one first and one second pn junction, suitable to form at least one vertical double-junction photodiode; removing said intermetal dielectric layers in correspondence with at least one opening suitable to expose a surface of said semiconductor substrate in correspondence with said double junction, depositing a first anti-reflection dielectric layer covering at least said surface; and depositing on said first anti-reflection dielectric layer a second anti-reflection dielectric layer to form a double-layer anti-reflection coating suitable to obtain for the photodiode a responsivity peak in correspondence with a predetermined wavelength of an optical signal being incident on said sensor. - View Dependent Claims (7, 8, 9, 10)
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11. An electronic device, comprising:
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a first p-n junction; a second p-n junction; a first antireflective layer disposed over the first and second junctions; and a second antireflective layer disposed over the first antireflective layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. An integrated circuit, comprising:
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a first p-n junction; a second p-n junction; a first antireflective coating disposed over the first and second junctions; and a second antireflective coating disposed over the first antireflective coating. - View Dependent Claims (25, 26, 27, 28, 29)
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30. A system, comprising:
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a first integrated circuit including at least one photodiode each including a first p-n junction; a second p-n junction; a first antireflective coating disposed over the first and second junctions; and a second antireflective coating disposed over the first antireflective coating; and a second integrated circuit coupled to the first integrated circuit. - View Dependent Claims (31, 32, 33, 34)
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35. A method, comprising:
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receiving a wavelength of electromagnetic radiation through a first material having a first thickness approximately equal to one fourth of the wavelength and through a second material having a second thickness approximately equal to one half of the wavelength; and generating a first current across a first p-n junction in response to the received wavelength; and generating a second current across a second p-n junction in response to the received wavelength. - View Dependent Claims (36, 37, 38, 39, 40, 41)
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Specification