RADIATION SENSOR WITH PHOTODIODES BEING INTEGRATED ON A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING INTEGRATION PROCESS
First Claim
1. Sensor integrated on a semiconductor substrate and comprising at least one first and one second photodiode including at least one first and one second p-n junction made in said semiconductor substrate as well as at least one first and one second antireflection coating made on top of said first and second photodiodes, wherein at least one antireflection coating of said first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining a responsivity peak for the corresponding photodiode at a predetermined wavelength of an optical signal incident on said sensor.
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Accused Products
Abstract
An embodiment relates to a sensor integrated on a semiconductor substrate and comprising at least one first and second photodiode including at least one first and one second p-n junction made in such a semiconductor substrate as well as at least one first and one second antireflection coating made on top of such a first and second photodiode. At least one antireflection coating of such a first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining for the corresponding photodiode a responsivity peak at a predetermined wavelength of an optical signal incident on the sensor. An embodiment also refers to an integration process of such a sensor, as well as to an ambient light sensor made with such a sensor.
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Citations
57 Claims
- 1. Sensor integrated on a semiconductor substrate and comprising at least one first and one second photodiode including at least one first and one second p-n junction made in said semiconductor substrate as well as at least one first and one second antireflection coating made on top of said first and second photodiodes, wherein at least one antireflection coating of said first and second photodiode comprises at least one first and one second different antireflection layer to make a double layer antireflection coating suitable for obtaining a responsivity peak for the corresponding photodiode at a predetermined wavelength of an optical signal incident on said sensor.
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9. Integration process of a sensor with photodiodes being integrated in a multi-layer structure comprising a semiconductor substrate and a structure of alternating intermetal dielectric layers and metallic layers, as well as an upper passivation layer of the type comprising the steps of:
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making at least one first and one second pn junction, suitable for making at least one first and one second photodiode in said semiconductor substrate; removal of said intermetal dielectric layers and of said upper passivation layer at least one opening suitable for uncovering a surface of said semiconductor substrate at said junctions, deposition of a first antireflection dielectric layer covering at least said surface; and deposition on top of said first antireflection dielectric layer of a second antireflection dielectric layer to make a double layer antireflection coating suitable for obtaining a responsivity peak for the corresponding photodiode at a predetermined wavelength of an optical signal incident on said sensor. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. An electronic device, comprising:
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a first p-n junction; a second p-n junction; a first antireflective coating disposed over the first junction; a second antireflective coating disposed over the second junction; and wherein at least one of the first and second antireflective coatings comprises a first antireflective layer having a first thickness and a second antireflective layer disposed over the first antireflective layer and having a second thickness that is different from the first thickness. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. An integrated circuit, comprising:
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a first p-n junction; a second p-n junction; a first antireflective coating disposed over the first junction; a second antireflective coating disposed over the second junction; and wherein at least one of the first and second antireflective coatings comprises a first antireflective layer having a first thickness and a second antireflective layer disposed over the first antireflective layer and having a second thickness that is different from the first thickness. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39, 40, 41)
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42. A system, comprising:
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a first integrated circuit including; at least a first photodiode including a first p-n junction and a first antireflective coating disposed over the first junction, at least a second photodiode including a second p-n junction and a second antireflective coating disposed over the second junction, and wherein at least one of the first and second antireflective coatings comprises a first antireflective layer having a first thickness and a second antireflective layer disposed over the first antireflective layer and having a second thickness that is different from the first thickness; and a second integrated circuit coupled to the first integrated circuit. - View Dependent Claims (43, 44, 45, 46, 47)
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48. A method, comprising:
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receiving a first wavelength of electromagnetic radiation through a first antireflective layer having a first thickness and through a second antireflective layer having a second thickness that is different than the first thickness; receiving a second wavelength of electromagnetic radiation through a third antireflective layer; generating a first signal across a first p-n junction in response to the received first wavelength; and generating a second signal across a second p-n junction in response to the received second wavelength. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57)
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Specification