NANO-HETERO STRUCTURE AND METHOD OF FABRICATING THE SAME

• US 20100163841A1
• Filed: 04/30/2009
• Published: 07/01/2010
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Hsu, Yung-Jung, Chen, Chun-Yi
• Granted Patent: US 8,030,185 B2
• Time in Patent Office: Days
• US Class Current: 257/14
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0669 Nanowires or nanotubes carbon nanotubes as material of solid-state device active part H10K85/211
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 31/0352 characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
• CPC Class Codes: Y10S 977/762 Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Abstract

A nano-hetero structure is provided. The nano-hetero structure includes at least one nano-semiconductor base and a plurality of metal nanoparticles attached on the surface of nano-semiconductor base.

Claims

1. A nano-hetero structure, comprising:

at least a nano-semiconductor base; and

a plurality of metal nanoparticles attached to the nano-semiconductor base.

2. The nano-hetero structure according to claim 1, wherein a material of the nano-semiconductor base comprises CdS, CdSe, ZnO, ZnS, ZnSe, ZnO—

RuO₂, CuGaS₂, TiO₂, GaP, GaAs, or a combination thereof.

3. The nano-hetero structure according to claim 1, wherein a material of the metal nanoparticles comprises Fe, Co, Ni, Cu, Ga, Mo, Ru, Rh, Pd, Ag, In, Sb, Ir, Pt, Au, Pb, or a combination thereof.

4. The nano-hetero structure according to claim 1, wherein the nano-semiconductor base is a nanowire, nanowires array, nanotube, nanotubes array, nanoparticle, porous nano-structure, or a combination thereof.

5. The nano-hetero structure according to claim 4, wherein a diameter of the nanowire, a diameter of the nanoparticle, or a pore size of the porous nano-structure is about 20˜

110 nm.

6. The nano-hetero structure according to claim 4, wherein an outer diameter of the nanotube is about 20˜

110 nm and an inner diameter of the nanotube is smaller than the outer diameter by about 10˜

50 nm.

7. The nano-hetero structure according to claim 1, wherein the metal nanoparticles are granular, cylindrical, triangular-conical, or porous.

8. The nano-hetero structure according to claim 1, wherein a size of the metal nanoparticles is about 3˜

150 nm.

9. The nano-hetero structure according to claim 1, wherein the nano-hetero structure is used to absorb solar energy and convert it into chemical energy, hydrogen energy, or electrical energy.

10. The nano-hetero structure according to claim 9, wherein the chemical energy is applied in decomposition of organic waste by photo-catalysis, deodorization by photo-catalysis, or sterilization by photo-catalysis.

11. The nano-hetero structure according to claim 9, wherein the chemical energy comprises hydrogen energy produced in photocatalytic water splitting or generated by electro-chemical electrolysis of acid.

12. The nano-hetero structure according to claim 9, wherein the electrical energy is produced in a photo-electrical storage device or a solar cell.

13. A fabricating method of a nano-hetero structure, comprising:

fabricating at least a nano-semiconductor base; and

adding a metal ion solution into a amine solvent containing the nano-semiconductor base such that a plurality of metal nanoparticles are grown on a surface of nano-semiconductor base to form the nano-hetero structure.

14. The fabricating method of a nano-hetero structure according to claim 13, wherein a method of fabricating the nano-semiconductor base comprises a solvothermal synthetic method.

15. The fabricating method of a nano-hetero structure according to claim 14, wherein the solvothermal method uses the amine solvent as a capping agent.

16. The fabricating method of a nano-hetero structure according to claim 15, wherein the amine solvent comprises ethylenediamine or diethylenetriamine.

17. The fabricating method of a nano-hetero structure according to claim 13, wherein a material of the nano-semiconductor base comprises CdS, CdSe, ZnO, ZnS, ZnSe, ZnO—

RuO₂, CuGaS₂, TiO₂, GaP, GaAs, or a combination thereof.

18. The fabricating method of a nano-hetero structure according to claim 13, wherein the metal ion solution comprises ion of Fe, Co, Ni, Cu, Ga, Mo, Ru, Rh, Pd, Ag, In, Sb, Ir, Pt, Au, or Pb, or a combination thereof.