DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A display device comprising:
- a gate electrode formed over a substrate;
a gate insulating film formed over the gate electrode;
a wiring and an electrode layer provided over the gate insulating film; and
a high-resistance oxide semiconductor layer formed between the wiring and the electrode layer over the gate insulating film,wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, andwherein the electrode layer comprising a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer,wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode.
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Accused Products
Abstract
A display device includes a first wiring functioning as a gate electrode formed over a substrate, a gate insulating film formed over the first wiring, a second wiring and an electrode layer provided over the gate insulating film, and a high-resistance oxide semiconductor layer formed between the second wiring and the electrode layer are included. In the structure, the second wiring is formed using a stack of a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, and the electrode layer is formed using a stack of the low-resistance oxide semiconductor layer and the conductive layer which is stacked so that a region functioning as a pixel electrode of the low-resistance oxide semiconductor layer is exposed.
91 Citations
12 Claims
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1. A display device comprising:
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a gate electrode formed over a substrate; a gate insulating film formed over the gate electrode; a wiring and an electrode layer provided over the gate insulating film; and a high-resistance oxide semiconductor layer formed between the wiring and the electrode layer over the gate insulating film, wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, and wherein the electrode layer comprising a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode. - View Dependent Claims (9)
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2. A display device comprising:
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a gate electrode formed over a substrate; a gate insulating film formed over the gate electrode; a high-resistance oxide semiconductor layer formed in an island shape over the gate insulating film; and a wiring and an electrode layer provided over the gate insulating film and the high-resistance oxide semiconductor layer, wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, and wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode. - View Dependent Claims (10)
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3. A display device comprising:
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a wiring and an electrode layer over a substrate; a high-resistance oxide semiconductor layer formed between the wiring and the electrode layer over the substrate; a gate insulating film formed over the high-resistance oxide semiconductor layer; and a gate electrode formed over the gate insulating film, wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, and wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode. - View Dependent Claims (11)
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4. A display device comprising:
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a high-resistance oxide semiconductor layer formed in an island shape over a substrate; a wiring and an electrode layer over the substrate and the high-resistance oxide semiconductor layer; a gate insulating film formed over the high-resistance oxide semiconductor layer; and a gate electrode formed over the gate insulating film, wherein the wiring comprises a first low-resistance oxide semiconductor layer and a first conductive layer over the first low-resistance oxide semiconductor layer, and wherein the electrode layer comprises a second low-resistance oxide semiconductor layer and a second conductive layer covering a first portion of the second low-resistance oxide semiconductor layer, wherein a second portion of the second low-resistance oxide semiconductor layer is arranged to function as a pixel electrode. - View Dependent Claims (12)
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5. A method of manufacturing a display device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a wiring and an electrode layer over the gate insulating film by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer; and forming a high-resistance oxide semiconductor layer between the wiring and the electrode layer over the gate insulating film, wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
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6. A method of manufacturing a display device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a high-resistance oxide semiconductor layer so as to have an island shape over the gate insulating film; and forming a wiring and an electrode layer over the gate insulating film and the high-resistance oxide semiconductor layer by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer, wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
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7. A method of manufacturing a display device, comprising the steps of:
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forming a wiring and an electrode layer over a substrate by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer; forming a high-resistance oxide semiconductor layer between the wiring and the electrode layer over the substrate; forming a gate insulating film over the high-resistance oxide semiconductor layer; and forming a gate electrode over the gate insulating film, wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
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8. A method of manufacturing a display device, comprising the steps of:
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forming a high-resistance oxide semiconductor layer so as to have an island shape over a substrate; forming a wiring and an electrode layer over the substrate and the high-resistance oxide semiconductor layer by stacking a low-resistance oxide semiconductor layer and a conductive layer over the low-resistance oxide semiconductor layer; forming a gate insulating film over the high-resistance oxide semiconductor layer; and forming a gate electrode over the gate insulating film, wherein a region of the conductive layer which corresponds to a region of the electrode layer functioning as a pixel electrode is etched, so that the low-resistance oxide semiconductor layer is exposed.
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Specification