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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100163866A1
  • Filed: 12/09/2009
  • Published: 07/01/2010
  • Est. Priority Date: 12/25/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    a gate insulating film provided over the gate electrode layer;

    a first electrode layer and a second electrode layer whose end portions overlap with the gate electrode layer provided over the gate insulating film;

    a first protective layer provided over the first electrode layer;

    a second protective layer provided over the second electrode layer; and

    a first semiconductor layer provided to overlap with the gate electrode layer and to be in contact with the gate insulating film, side face portions of the first electrode layer and the second electrode layer, and side face portions and top face portions of the first protective layer and the second protective layer,wherein the first protective layer and the second protective layer have a conductivity that is less than or equal to that of the first semiconductor layer.

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