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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20100163868A1
  • Filed: 12/23/2009
  • Published: 07/01/2010
  • Est. Priority Date: 12/26/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a gate electrode over an insulating surface;

    forming an insulating layer over the gate electrode;

    forming a metal thin film over the insulating layer;

    forming an oxide semiconductor layer over the metal thin film; and

    performing oxidation treatment on at least a part of the metal thin film after forming the oxide semiconductor layer.

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