SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- forming a gate electrode over an insulating surface;
forming an insulating layer over the gate electrode;
forming a metal thin film over the insulating layer;
forming an oxide semiconductor layer over the metal thin film; and
performing oxidation treatment on at least a part of the metal thin film after forming the oxide semiconductor layer.
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Accused Products
Abstract
A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.
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Citations
28 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode over an insulating surface; forming an insulating layer over the gate electrode; forming a metal thin film over the insulating layer; forming an oxide semiconductor layer over the metal thin film; and performing oxidation treatment on at least a part of the metal thin film after forming the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a matrix circuit and a driver circuit which drives the matrix circuit over an insulating surface, wherein the driver circuit comprises a first thin film transistor including a stack of a first oxide semiconductor layer and a second oxide semiconductor layer, the stack overlapping with a first gate electrode with a first gate insulating film interposed therebetween, wherein the matrix circuit includes a second thin film transistor, the second thin film transistor including a third oxide semiconductor layer overlapping with a second gate electrode with a second gate insulating film interposed therebetween, wherein the first oxide semiconductor layer comprises a first material, wherein the second oxide semiconductor layer comprises a second material being different from the first material, and wherein the third oxide semiconductor layer comprises the second material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device comprising a matrix circuit and a driver circuit configured to drive the matrix circuit over a substrate, comprising:
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forming a first oxide semiconductor layer over the substrate in a matrix circuit region and a driver circuit region; removing the first oxide semiconductor layer from the matrix circuit region by etching; and forming a second oxide semiconductor layer and a third oxide semiconductor layer, the second oxide semiconductor layer being formed over the first oxide semiconductor layer in the driver circuit region and the third oxide semiconductor layer being formed over the substrate in the matrix circuit region, wherein a first thin film transistor in the driver circuit region comprises a stack of the first oxide semiconductor layer and the second oxide semiconductor layer, and wherein a second thin film transistor in the matrix circuit region comprises the third oxide semiconductor layer. - View Dependent Claims (17, 18)
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19. A method for manufacturing a semiconductor device which includes a matrix circuit and a driver circuit configured to drive the matrix circuit over a substrate, comprising:
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forming a metal thin film over the substrate in a matrix circuit region and a driver circuit region; removing the metal thin film from the matrix circuit region by etching; forming a first oxide semiconductor layer over the metal thin film in the driver circuit region and over the substrate in the matrix circuit region; and forming a second oxide semiconductor layer by performing oxidation treatment on the metal thin film after forming the oxide semiconductor layer, wherein a first thin film transistor comprises a stack of the first oxide semiconductor layer and the second oxide semiconductor layer in the driver circuit region, and wherein a second thin film transistor comprises a third oxide semiconductor layer in the matrix circuit region. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification