DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE

• US 20100163874A1
• Filed: 12/18/2009
• Published: 07/01/2010
• Est. Priority Date: 12/24/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KOEZUKA, Junichi, KOYAMA, Jun, IMOTO, Yuki, SAKATA, Junichiro, MARUYAMA, Tetsunori, ASANO, Yuji
• Granted Patent: US 9,202,827 B2
• Time in Patent Office: Days
• US Class Current: 257/57
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 28/20 Resistors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH₄) and ammonia (NH₃) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

Claims

1. A logic circuit comprising:

a resistor in which a first oxide semiconductor layer is used for a resistor element;

a thin film transistor in which a second oxide semiconductor layer having a lower concentration of hydrogen than the first oxide semiconductor layer is used for a channel formation region;

a silicon oxide layer provided over the second oxide semiconductor layer; and

a silicon nitride layer provided over the first oxide semiconductor layer and the silicon oxide layer.

2. The logic circuit according to claim 1, further comprising:

a third oxide semiconductor layer in contact with one terminal or the other terminal of the resistor and the first oxide semiconductor layer;

a fourth oxide semiconductor layer in contact with a first terminal of the thin film transistor and the second oxide semiconductor layer; and

a fifth oxide semiconductor layer in contact with a second terminal of the thin film transistor and the second oxide semiconductor layer,

wherein the resistance of each of the third oxide semiconductor layer to the fifth oxide semiconductor layer is lower than that of the second oxide semiconductor layer.

3. The logic circuit according to claim 2, wherein each of the third oxide semiconductor layer to the fifth oxide semiconductor layer has a ratio of nitrogen to oxygen of 0.1 to 0.5.

6. The logic circuit according to claim 1,

wherein one terminal of the resistor is electrically connected to a high power supply potential line, and

the first terminal of the thin film transistor is electrically connected to the other terminal of the resistor and the second terminal of the thin film transistor is electrically connected to a low power supply potential line.

7. The logic circuit according to claim 2,

wherein one terminal of the resistor is electrically connected to a high power supply potential line, and

the first terminal of the thin film transistor is electrically connected to the other terminal of the resistor and the second terminal of the thin film transistor is electrically connected to a low power supply potential line.

8. The logic circuit according to claim 3,

wherein one terminal of the resistor is electrically connected to a high power supply potential line, and

the first terminal of the thin film transistor is electrically connected to the other terminal of the resistor and the second terminal of the thin film transistor is electrically connected to a low power supply potential line.

11. A semiconductor device comprising the logic circuit according to claim 1.

12. A semiconductor device comprising the logic circuit according to claim 2.

13. A semiconductor device comprising the logic circuit according to claim 3.

16. A semiconductor device comprising the logic circuit according to claim 6.

4. A logic circuit comprising:

a resistor in which a first oxide semiconductor layer containing a high concentration of nitrogen is used for a resistor element; and

a thin film transistor in which a second oxide semiconductor layer containing a high concentration of nitrogen and a lower concentration of hydrogen than the first oxide semiconductor layer is used for a channel formation region,

wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer has a ratio of nitrogen to oxygen of 0.1 to 0.5.

5. The logic circuit according to claim 4, further comprising:

a silicon oxide layer provided over the second oxide semiconductor layer; and

a silicon nitride layer provided over the first oxide semiconductor layer and the silicon oxide layer.

9. The logic circuit according to claim 4,

wherein one terminal of the resistor is electrically connected to a high power supply potential line, and

the first terminal of the thin film transistor is electrically connected to the other terminal of the resistor and the second terminal of the thin film transistor is electrically connected to a low power supply potential line.

10. The logic circuit according to claim 5,

wherein one terminal of the resistor is electrically connected to a high power supply potential line, and

the first terminal of the thin film transistor is electrically connected to the other terminal of the resistor and the second terminal of the thin film transistor is electrically connected to a low power supply potential line.

14. A semiconductor device comprising the logic circuit according to claim 4.

15. A semiconductor device comprising the logic circuit according to claim 5.